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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
RQ6E055BNTCR

RQ6E055BNTCR

ROHM Semiconductor

MOSFET N-CH 30V 5.5A TSMT6

114
TK190A65Z,S4X

TK190A65Z,S4X

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CH 650V 15A TO220SIS

250
IXTQ88N30P

IXTQ88N30P

Wickmann / Littelfuse

MOSFET N-CH 300V 88A TO3P

0
2SK3054-T1-A

2SK3054-T1-A

Renesas Electronics America

MOSFET N-CH 50V 100MA SC70-3 SSP

12000
XP233N05013R-G

XP233N05013R-G

Torex Semiconductor Ltd.

MOSFET N-CH 30V 500MA SOT323-3

2990
PSMN2R8-40BS,118

PSMN2R8-40BS,118

NXP Semiconductors

MOSFET N-CH 40V 100A D2PAK

11667
SIHU5N50D-GE3

SIHU5N50D-GE3

Vishay / Siliconix

MOSFET N-CH 500V 5.3A TO251

2212
PHP45NQ11T,127

PHP45NQ11T,127

Nexperia

MOSFET N-CH 105V 47A TO220AB

11990
PSMN011-30YLC,115

PSMN011-30YLC,115

Nexperia

MOSFET N-CH 30V 37A LFPAK56

2913
NTMFS4C290NT1G

NTMFS4C290NT1G

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 30V 8.2A/46A 5DFN

3000
IXTA06N120P

IXTA06N120P

Wickmann / Littelfuse

MOSFET N-CH 1200V 600MA TO263

3651
BUK7905-40AI,127

BUK7905-40AI,127

Nexperia

PFET, 75A I(D), 40V, 0.005OHM, 1

8852
PSMN1R0-40ULDX

PSMN1R0-40ULDX

Nexperia

MOSFET N-CH 40V 280A LFPAK56

0
SI2343DS-T1-E3

SI2343DS-T1-E3

Vishay / Siliconix

MOSFET P-CH 30V 3.1A SOT23-3

18795
STW56N60M2

STW56N60M2

STMicroelectronics

MOSFET N-CH 600V 52A TO247

4236
IRLU8729-701PBF

IRLU8729-701PBF

IR (Infineon Technologies)

MOSFET N-CH 30V 58A TO251-3-21

2773
SI8429DB-T1-E1

SI8429DB-T1-E1

Vishay / Siliconix

MOSFET P-CH 8V 11.7A 4MICROFOOT

11970
STB18NF30

STB18NF30

STMicroelectronics

MOSFET N-CH 330V 18A D2PAK

975
SIHD9N60E-GE3

SIHD9N60E-GE3

Vishay / Siliconix

MOSFET N-CH 600V 9A DPAK

2965
FDU3580

FDU3580

MOSFET N-CH 80V 7.7A IPAK

1825

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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