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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRFU310PBF

IRFU310PBF

Vishay / Siliconix

MOSFET N-CH 400V 1.7A TO251AA

2074
FQPF1P50

FQPF1P50

MOSFET P-CH 500V 1.03A TO220F

0
FDC604P

FDC604P

Sanyo Semiconductor/ON Semiconductor

MOSFET P-CH 20V 5.5A SUPERSOT6

3099
SPP15N60C3

SPP15N60C3

IR (Infineon Technologies)

MOSFET N-CH 600V 15A TO220-3-1

322
BSC040N10NS5SCATMA1

BSC040N10NS5SCATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 140A WSON-8

1071
AUIRF2804S-7P

AUIRF2804S-7P

IR (Infineon Technologies)

PFET, 240A I(D), 40V, 0.0016OHM,

5357
NTLUS3A18PZTAG

NTLUS3A18PZTAG

Sanyo Semiconductor/ON Semiconductor

MOSFET P-CH 20V 5.1A 6UDFN

633
NTTFS4943NTAG

NTTFS4943NTAG

MOSFET N-CH 30V 8A/41A 8WDFN

72000
IXFA72N30X3-TRL

IXFA72N30X3-TRL

Wickmann / Littelfuse

MOSFET N-CH 300V 72A TO263

0
BSC070N10NS3GATMA1

BSC070N10NS3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 90A TDSON-8

100157
TN5325K1-G

TN5325K1-G

Roving Networks / Microchip Technology

MOSFET N-CH 250V 150MA TO236AB

3058
PMV30ENEAR

PMV30ENEAR

Nexperia

MOSFET N-CH 40V 4.8A TO236AB

5722
DMP2035UVTQ-7

DMP2035UVTQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 7.2A TSOT26

6560
CDM4-600LR TR13 PBFREE

CDM4-600LR TR13 PBFREE

Central Semiconductor

MOSFET N-CH 600V 4A DPAK

2218
IXFN82N60P

IXFN82N60P

Wickmann / Littelfuse

MOSFET N-CH 600V 72A SOT-227B

0
STP24N65M2

STP24N65M2

STMicroelectronics

MOSFET N-CH 650V 16A TO220

1000
TSM900N06CP ROG

TSM900N06CP ROG

TSC (Taiwan Semiconductor)

MOSFET N-CHANNEL 60V 11A TO252

0
RM50N60TI

RM50N60TI

Rectron USA

MOSFET N-CHANNEL 60V 50A TO220F

0
SSM3K376R,LF

SSM3K376R,LF

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CH 30V 4A SOT23F

10427
PSMN2R8-80BS,118

PSMN2R8-80BS,118

Nexperia

MOSFET N-CH 80V 120A D2PAK

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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