ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
FQPF14N15

FQPF14N15

MOSFET N-CH 150V 9.8A TO220F

1858
RSH065N06TB1

RSH065N06TB1

ROHM Semiconductor

MOSFET N-CH 60V 6.5A 8SOP

2350
FQPF3N90

FQPF3N90

MOSFET N-CH 900V 2.1A TO220F

53159
IRFIZ34NPBF

IRFIZ34NPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 21A TO220AB FP

1644
LND150N3-G

LND150N3-G

Roving Networks / Microchip Technology

MOSFET N-CH 500V 30MA TO92-3

1130
IP165R660CFD

IP165R660CFD

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

500
NTB5426NT4G

NTB5426NT4G

MOSFET N-CH 60V 120A D2PAK

13605
BSL207SPH6327XTSA1

BSL207SPH6327XTSA1

IR (Infineon Technologies)

MOSFET P-CH 20V 6A TSOP-6

2089
BS870-7-F

BS870-7-F

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 250MA SOT23-3

30783
AUIRFU4104

AUIRFU4104

IR (Infineon Technologies)

MOSFET N-CH 40V 42A TO251-3-21

21075
IRFR2307ZPBF

IRFR2307ZPBF

IR (Infineon Technologies)

MOSFET N-CH 75V 42A DPAK

0
PMZ200UNE315

PMZ200UNE315

NXP Semiconductors

SMALL SIGNAL N-CHANNEL MOSFET

393867
IPP60R190E6XKSA1

IPP60R190E6XKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 20.2A TO220-3

29
IPW60R160P6FKSA1

IPW60R160P6FKSA1

IR (Infineon Technologies)

MOSFET N-CH 600V 23.8A TO247-3

212
TSM3N80CP ROG

TSM3N80CP ROG

TSC (Taiwan Semiconductor)

MOSFET N-CHANNEL 800V 3A TO252

2415
MCH3375-TL-H

MCH3375-TL-H

MOSFET P-CH 30V 1.6A SC70

141500
SIDR610DP-T1-GE3

SIDR610DP-T1-GE3

Vishay / Siliconix

MOSFET N-CH 200V 8.9A/39.6A PPAK

1124
NVMFS4C05NT3G

NVMFS4C05NT3G

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 30V 24.7A/116A 5DFN

5000
FDS2572

FDS2572

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 150V 4.9A 8SOIC

0
IPD60N10S412ATMA1

IPD60N10S412ATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 60A TO252-3-313

9795

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

RFQ BOM Call Skype Email
Top