Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
PSMN9R5-100PS,127 Nexperia	MOSFET N-CH 100V 89A TO220AB	1143
IPW65R048CFDAFKSA1 IR (Infineon Technologies)	MOSFET N-CH 650V 63.3A TO247-3	0
IXFP8N85XM Wickmann / Littelfuse	MOSFET N-CH 850V 8A TO220	2750
IXTH10N100D2 Wickmann / Littelfuse	MOSFET N-CH 1000V 10A TO247	567690
PSMN2R2-40PS,127 Nexperia	MOSFET N-CH 40V 100A TO220AB	0
STW32N65M5 STMicroelectronics	MOSFET N-CH 650V 24A TO247-3	0
SMMBFJ310LT3	RF N-CHANNEL, JUNCTION FET	9868
IRLS4030PBF IR (Infineon Technologies)	MOSFET N-CH 100V 180A D2PAK	0
FQD13N10TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 100V 10A DPAK	631
STI24N60M2 STMicroelectronics	MOSFET N-CH 600V 18A I2PAK	0
TK8A50DA(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 500V 7.5A TO220SIS	0
BSC079N03LSCGATMA1 IR (Infineon Technologies)	MOSFET N-CH 30V 14A/50A TDSON	4097
RUC002N05HZGT116 ROHM Semiconductor	MOSFET N-CH 50V 200MA SST3	2478
SI4466DY	SMALL SIGNAL N-CHANNEL MOSFET	0
RSS095N05FU6TB ROHM Semiconductor	MOSFET N-CH 45V 9.5A 8SOP	1897
IPB240N04S4R9ATMA1 IR (Infineon Technologies)	MOSFET N-CH 40V 240A TO263-7	0
IRFB4310ZPBF IR (Infineon Technologies)	MOSFET N-CH 100V 120A TO220AB	1988
PMV45EN2215 NXP Semiconductors	SMALL SIGNAL N-CHANNEL MOSFET	0
IPZ60R040C7XKSA1 IR (Infineon Technologies)	IPZ60R040C7 - 600V COOLMOS N-CHA	870
IPP041N04NG	POWER FIELD-EFFECT TRANSISTOR, 8	294

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS