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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AOTF7T60PL

AOTF7T60PL

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 600V 7A TO220-3F

858
IXFP72N30X3

IXFP72N30X3

Wickmann / Littelfuse

MOSFET N-CH 300V 72A TO220AB

450
YJL3416A-F2-0100HF

YJL3416A-F2-0100HF

N-CH MOSFET 20V 7A SOT-23-3L

0
FDAF62N28

FDAF62N28

MOSFET N-CH 280V 36A TO3PF

1135
DMN26D0UT-7

DMN26D0UT-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 230MA SOT523

165077
SQM120N06-06_GE3

SQM120N06-06_GE3

Vishay / Siliconix

MOSFET N-CH 60V 120A TO263

684
FDP5680

FDP5680

MOSFET N-CH 60V 40A TO220-3

7663
PSMN1R1-30EL,127

PSMN1R1-30EL,127

Nexperia

MOSFET N-CH 30V 120A I2PAK

4007
IXFN360N15T2

IXFN360N15T2

Wickmann / Littelfuse

MOSFET N-CH 150V 310A SOT227B

0
FDS6679AZ

FDS6679AZ

Sanyo Semiconductor/ON Semiconductor

MOSFET P-CH 30V 13A 8SOIC

12742
IPB60R099P7ATMA1

IPB60R099P7ATMA1

IR (Infineon Technologies)

MOSFET N-CH 650V 31A D2PAK

404
UPA2718AGR-E2-AT

UPA2718AGR-E2-AT

Renesas Electronics America

MOSFET P-CH 30V 13A 8PSOP

5000
NTD5N50-001-MO

NTD5N50-001-MO

NFET DPAK 500V 1.8R

350
IRFZ24STRRPBF

IRFZ24STRRPBF

Vishay / Siliconix

MOSFET N-CH 60V 17A TO263

0
ZVN4310A

ZVN4310A

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 900MA TO92-3

29848000
TSM2N60ECP ROG

TSM2N60ECP ROG

TSC (Taiwan Semiconductor)

MOSFET N-CHANNEL 600V 2A TO252

2487
FCH190N65F-F155

FCH190N65F-F155

MOSFET N-CH 650V 20.6A TO247

0
TPH8R903NL,LQ

TPH8R903NL,LQ

Toshiba Electronic Devices and Storage Corporation

MOSFET N CH 30V 20A 8SOP

3070
AON7409

AON7409

Alpha and Omega Semiconductor, Inc.

MOSFET P-CH 30V 16A/32A 8DFN

0
EKI04027

EKI04027

Sanken Electric Co., Ltd.

MOSFET N-CH 40V 85A TO220-3

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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