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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
RSR025N03HZGTL

RSR025N03HZGTL

ROHM Semiconductor

MOSFET N-CH 30V 2.5A TSMT3

0
FDG316P

FDG316P

SMALL SIGNAL FIELD-EFFECT TRANSI

221114
DMT3003LFGQ-13

DMT3003LFGQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 22A PWRDI3333

0
FDU044AN03L

FDU044AN03L

MOSFET N-CH 30V 21A/35A IPAK

2806
J176_D74Z

J176_D74Z

SMALL SIGNAL FIELD-EFFECT TRANSI

0
IRF7799L2TRPBF

IRF7799L2TRPBF

IR (Infineon Technologies)

MOSFET N-CH 250V 375A DIRECTFET

43
SI2337DS-T1-GE3

SI2337DS-T1-GE3

Vishay / Siliconix

MOSFET P-CH 80V 2.2A SOT23-3

1012
BUK9M34-100EX

BUK9M34-100EX

Nexperia

MOSFET N-CH 100V 29A LFPAK33

0
FQA5N90

FQA5N90

MOSFET N-CH 900V 5.8A TO3P

523
SIHH080N60E-T1-GE3

SIHH080N60E-T1-GE3

Vishay / Siliconix

E SERIES POWER MOSFET POWERPAK 8

0
FQPF65N06

FQPF65N06

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 60V 40A TO220F

96
IAUC80N04S6N036ATMA1

IAUC80N04S6N036ATMA1

IR (Infineon Technologies)

IAUC80N04S6N036ATMA1

5000
SUM70030M-GE3

SUM70030M-GE3

Vishay / Siliconix

MOSFET N-CH 100V 150A TO263-7

30
BSP170PH6327XTSA1

BSP170PH6327XTSA1

IR (Infineon Technologies)

MOSFET P-CH 60V 1.9A SOT223-4

891
FDB0190N807L

FDB0190N807L

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 80V 270A TO263-7

492
DMN3010LFG-13

DMN3010LFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 11A PWRDI3333

0
IXTP160N10T

IXTP160N10T

Wickmann / Littelfuse

MOSFET N-CH 100V 160A TO220AB

8
BFL4004-1E

BFL4004-1E

MOSFET N-CH 800V 4.3A TO220F-3FS

36832
SPP02N80C3

SPP02N80C3

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

4321
CSD16411Q3

CSD16411Q3

Texas Instruments

MOSFET N-CH 25V 14A/56A 8VSON

16686

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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