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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IPB065N03LGATMA1

IPB065N03LGATMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 50A D2PAK

0
DMTH41M8SPS-13

DMTH41M8SPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 100A PWRDI5060-8

0
TSM80N950CI C0G

TSM80N950CI C0G

TSC (Taiwan Semiconductor)

MOSFET N-CH 800V 6A ITO220AB

478
SIRA88DP-T1-GE3

SIRA88DP-T1-GE3

Vishay / Siliconix

MOSFET N-CH 30V 45.5A PPAK SO-8

618
BUK6212-40C,118

BUK6212-40C,118

Nexperia

MOSFET N-CH 40V 50A DPAK

807
STWA58N65DM2AG

STWA58N65DM2AG

STMicroelectronics

MOSFET N-CH 650V 48A TO247

0
IQE013N04LM6ATMA1

IQE013N04LM6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 31A/205A 8TSON

9828
DMN10H220L-13

DMN10H220L-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 1.4A SOT23

0
IXFB30N120P

IXFB30N120P

Wickmann / Littelfuse

MOSFET N-CH 1200V 30A PLUS264

1603450
TPH7R006PL,L1Q

TPH7R006PL,L1Q

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CH 60V 60A 8SOP

6864
FCPF190N65S3L1

FCPF190N65S3L1

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 650V 14A TO220F-3

640475000
STF5N95K5

STF5N95K5

STMicroelectronics

MOSFET N-CH 950V 3.5A TO220FP

945
IRF540PBF

IRF540PBF

Vishay / Siliconix

MOSFET N-CH 100V 28A TO220AB

4628
SI2302DS,215

SI2302DS,215

NXP Semiconductors

SMALL SIGNAL FIELD-EFFECT TRANSI

57446
MMFTN20

MMFTN20

Diotec Semiconductor

MOSFET N-CH 50V 100MA SOT23-3

0
MMDF4N01HDR2

MMDF4N01HDR2

N-CHANNEL POWER MOSFET

117500
PMV20XNEAR

PMV20XNEAR

Nexperia

PMV20XNEA - 20 V, N-CHANNEL TREN

357900
STL6N3LLH6

STL6N3LLH6

STMicroelectronics

MOSFET N-CH 30V POWERFLAT

0
IPB80N04S303ATMA1

IPB80N04S303ATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 80A TO263-3

48
IXFA230N075T2

IXFA230N075T2

Wickmann / Littelfuse

MOSFET N-CH 75V 230A TO263

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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