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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
TSM120N06LCP ROG

TSM120N06LCP ROG

TSC (Taiwan Semiconductor)

MOSFET N-CHANNEL 60V 70A TO252

0
AOH3254

AOH3254

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 150V 5A SOT223-4

0
FQA7N80C

FQA7N80C

MOSFET N-CH 800V 7A TO3P

25078
NTB52N10

NTB52N10

MOSFET N-CH 100V 52A D2PAK-3

0
STP30NF10

STP30NF10

STMicroelectronics

MOSFET N-CH 100V 35A TO220AB

1388
SIR158DP-T1-GE3

SIR158DP-T1-GE3

Vishay / Siliconix

MOSFET N-CH 30V 60A PPAK SO-8

3306
SCH1433-TL-H

SCH1433-TL-H

MOSFET N-CH 20V 3.5A 6SCH

594000
SPD08N50C3ATMA1

SPD08N50C3ATMA1

IR (Infineon Technologies)

MOSFET N-CH 500V 7.6A TO252-3

700
IXTP86N20T

IXTP86N20T

Wickmann / Littelfuse

MOSFET N-CH 200V 86A TO220AB

1300
FQD5N15TF

FQD5N15TF

MOSFET N-CH 150V 4.3A DPAK

0
HUF75333S3

HUF75333S3

MOSFET N-CH 55V 66A I2PAK

1488
IRFI7536GPBF

IRFI7536GPBF

IR (Infineon Technologies)

HEXFET N-CHANNEL POWER MOSFET

0
PSMN2R0-40YLDX

PSMN2R0-40YLDX

Nexperia

MOSFET N-CH 40V 180A LFPAK56

1500
IXTP6N100D2

IXTP6N100D2

Wickmann / Littelfuse

MOSFET N-CH 1000V 6A TO220AB

261
IPD60R380P6ATMA1

IPD60R380P6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 10.6A TO252-3

4826
DMTH10H015SPSQ-13

DMTH10H015SPSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V PWRDI5060

0
RRF015P03TL

RRF015P03TL

ROHM Semiconductor

MOSFET P-CH 30V 1.5A TUMT3

0
DMN3065LW-7

DMN3065LW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 4A SOT-323

449521
2N7000RLRA

2N7000RLRA

MOSFET N-CH 60V 200MA TO92-3

0
NTD110N02RG

NTD110N02RG

MOSFET N-CH 24V 12.5A/110A DPAK

25100

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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