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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
AUIRLR2905

AUIRLR2905

IR (Infineon Technologies)

MOSFET N-CH 55V 42A DPAK

31596
RMP3N90IP

RMP3N90IP

Rectron USA

MOSFET N-CHANNEL 900V 3A TO251

0
SSM3J168F,LF

SSM3J168F,LF

Toshiba Electronic Devices and Storage Corporation

MOSFET P-CH 60V 400MA S-MINI

9496
SFS9630

SFS9630

P-CHANNEL POWER MOSFET

16033
STP7NK80Z

STP7NK80Z

STMicroelectronics

MOSFET N-CH 800V 5.2A TO220AB

605
BUZ76A

BUZ76A

N-CHANNEL POWER MOSFET

10600
RD3L01BATTL1

RD3L01BATTL1

ROHM Semiconductor

PCH -60V -10A POWER MOSFET - RD3

0
SI4420DYPBF

SI4420DYPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 12.5A 8SO

0
SQJ461EP-T1_GE3

SQJ461EP-T1_GE3

Vishay / Siliconix

MOSFET P-CH 60V 30A PPAK SO-8

0
NTB22N06LT4

NTB22N06LT4

MOSFET N-CH 60V 22A D2PAK

0
IPP086N10N3G

IPP086N10N3G

IR (Infineon Technologies)

POWER FIELD-EFFECT TRANSISTOR, 8

0
IXTA32P20T-TRL

IXTA32P20T-TRL

Wickmann / Littelfuse

MOSFET P-CH 200V 32A TO263

0
FCD7N60TM-WS

FCD7N60TM-WS

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 600V 7A DPAK

1614
TK8A60W5,S5VX

TK8A60W5,S5VX

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CH 600V 8A TO220SIS

31
APT8030LVRG

APT8030LVRG

Roving Networks / Microchip Technology

MOSFET N-CH 800V 27A TO264

0
IXFH230N10T

IXFH230N10T

Wickmann / Littelfuse

MOSFET N-CH 100V 230A TO247AD

0
TN0610N3-G

TN0610N3-G

Roving Networks / Microchip Technology

MOSFET N-CH 100V 500MA TO92-3

697
BUK9608-55B,118

BUK9608-55B,118

Nexperia

MOSFET N-CH 55V 75A D2PAK

40588
FDB7030BL-ON

FDB7030BL-ON

MOSFET N-CH 30V 60A D2PAK

5669
IPB240N03S4LR8ATMA1928

IPB240N03S4LR8ATMA1928

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

5000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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