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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
NVD5C688NLT4G

NVD5C688NLT4G

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CHANNEL 60V 17A DPAK

0
5HP01M-TL-E-FS

5HP01M-TL-E-FS

MOSFET P-CH 50V 0.07A MCP3

45000
ATP203-TL-H

ATP203-TL-H

Sanyo Denki SanUPS Products

MOSFET N-CH 30V 75A DPAK/ATPAK

8856
IRFB52N15DPBF

IRFB52N15DPBF

IR (Infineon Technologies)

MOSFET N-CH 150V 51A TO220AB

137
5LP01C-TB-E

5LP01C-TB-E

MOSFET P-CH 50V 70MA 3CP

6500
UF3SC120009K4S

UF3SC120009K4S

UnitedSiC

SICFET N-CH 1200V 120A TO247-4

1742
VN2460N3-G

VN2460N3-G

Roving Networks / Microchip Technology

MOSFET N-CH 600V 160MA TO92-3

158
SPD04N80C3ATMA1

SPD04N80C3ATMA1

IR (Infineon Technologies)

MOSFET N-CH 800V 4A TO252-3

2092
TSM2301BCX RFG

TSM2301BCX RFG

TSC (Taiwan Semiconductor)

MOSFET P-CHANNEL 20V 2.8A SOT23

6
BUK9Y59-60E,115

BUK9Y59-60E,115

Nexperia

MOSFET N-CH 60V 16.7A LFPAK56

0
FQD3N60CTM-WS

FQD3N60CTM-WS

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 600V 2.4A DPAK

1880
STB18NF25

STB18NF25

STMicroelectronics

MOSFET N-CH 250V 17A D2PAK

1069
NTMS4503NR2G

NTMS4503NR2G

MOSFET N-CH 28V 9A 8SOIC

130841
IXFP4N100P

IXFP4N100P

Wickmann / Littelfuse

MOSFET N-CH 1000V 4A TO220AB

900
AON6268

AON6268

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 60V 44A 8DFN

3247
SPP02N60C3IN

SPP02N60C3IN

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
IXTA6N50D2-TRL

IXTA6N50D2-TRL

Wickmann / Littelfuse

MOSFET N-CH 500V 6A TO263

713
STU8NM50N

STU8NM50N

STMicroelectronics

MOSFET N-CH 500V 5A IPAK

0
TJ15S06M3L(T6L1,NQ

TJ15S06M3L(T6L1,NQ

Toshiba Electronic Devices and Storage Corporation

MOSFET P-CH 60V 15A DPAK

0
2SK1657-T1B-A

2SK1657-T1B-A

Renesas Electronics America

SMALL SIGNAL N-CHANNEL MOSFET

70805

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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