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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
ISL9N304AS3ST

ISL9N304AS3ST

N-CHANNEL POWER MOSFET

4660
IPB120N08S403ATMA1

IPB120N08S403ATMA1

IR (Infineon Technologies)

MOSFET N-CH 80V 120A TO263-3-2

0
IPZ65R065C7XKSA1

IPZ65R065C7XKSA1

IR (Infineon Technologies)

MOSFET N-CH 650V 33A TO247-4

239
BSO110N03MSGXUMA1

BSO110N03MSGXUMA1

IR (Infineon Technologies)

MOSFET N-CH 30V 10A 8DSO

0
IXTH440N055T2

IXTH440N055T2

Wickmann / Littelfuse

MOSFET N-CH 55V 440A TO247

0
2N7002W-7-F

2N7002W-7-F

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 115MA SOT323

770011
3LN01SS-TL-E

3LN01SS-TL-E

MOSFET N-CH 30V 150MA SC81

87900
BSP129H6906XTSA1

BSP129H6906XTSA1

IR (Infineon Technologies)

MOSFET N-CH 240V 350MA SOT223-4

453
PSMN130-200D,118-NEX

PSMN130-200D,118-NEX

Nexperia

POWER FIELD-EFFECT TRANSISTOR, 2

0
SIHF23N60E-GE3

SIHF23N60E-GE3

Vishay / Siliconix

MOSFET N-CH 600V 23A TO220

0
R6024ENX

R6024ENX

ROHM Semiconductor

MOSFET N-CH 600V 24A TO220FM

300
AUIRF2804STRL

AUIRF2804STRL

IR (Infineon Technologies)

MOSFET N-CH 40V 195A D2PAK

4000
IXFN21N100Q

IXFN21N100Q

Wickmann / Littelfuse

MOSFET N-CH 1000V 21A SOT-227B

0
IXTP24N65X2

IXTP24N65X2

Wickmann / Littelfuse

MOSFET N-CH 650V 24A TO220AB

0
AON6792

AON6792

Alpha and Omega Semiconductor, Inc.

MOSFET N-CH 30V 44A/85A 8DFN

5403
IRL530NPBF

IRL530NPBF

IR (Infineon Technologies)

MOSFET N-CH 100V 17A TO220AB

1617
SQA401EJ-T1_GE3

SQA401EJ-T1_GE3

Vishay / Siliconix

MOSFET P-CH 20V 3.75A PPAK SC70

0
STP180N4F6

STP180N4F6

STMicroelectronics

MOSFET N-CHANNEL 40V 120A TO220

0
IXTT82N25P

IXTT82N25P

Wickmann / Littelfuse

MOSFET N-CH 250V 82A TO268

870
TK6Q60W,S1VQ

TK6Q60W,S1VQ

Toshiba Electronic Devices and Storage Corporation

MOSFET N-CH 600V 6.2A IPAK

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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