Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IRFR010PBF-BE3 Vishay / Siliconix	MOSFET N-CH 50V 8.2A DPAK	2990
STF15N95K5 STMicroelectronics	MOSFET N-CH 950V 12A TO220FP	767
BUK964R4-40B,118 Nexperia	MOSFET N-CH 40V 75A D2PAK	8775
IRFR3711ZTRPBF IR (Infineon Technologies)	MOSFET N-CH 20V 93A DPAK	4205
STL260N4F7 STMicroelectronics	MOSFET N-CH 40V 120A POWERFLAT	11
NDF02N60ZG Sanyo Denki SanUPS Products	MOSFET N-CH 600V 2.4A TO220-3	183327
MCAC80N06Y-TP Micro Commercial Components (MCC)	MOSFET N-CH 60V 80A DFN5060	13642
TK40E06N1,S1X Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 60V 40A TO220	21
IPB80N06S2LH5 IR (Infineon Technologies)	N-CHANNEL POWER MOSFET	5000
NVMFS6H824NT1G Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 80V 19A/103A 5DFN	2
RF1K4909096	N-CHANNEL POWER MOSFET	60849
SQ4153EY-T1_BE3 Vishay / Siliconix	MOSFET P-CHANNEL 12V 25A 8SOIC	2470
SSM5N15FE(TE85L,F) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 30V 100MA ESV	51
FDA28N50 Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 500V 28A TO3PN	216
PSMN010-25YLC,115 NXP Semiconductors	MOSFET N-CH 25V 39A LFPAK56	4030
DMP4015SK3Q-13 Zetex Semiconductors (Diodes Inc.)	MOSFET P-CH 40V 14A/35A TO252	0
SPD30N03S2L07GBTMA1 IR (Infineon Technologies)	MOSFET N-CH 30V 30A TO252-3	7500
CSD18511Q5AT Texas Instruments	MOSFET N-CH 40V 159A 8VSON	552
AON6558 Alpha and Omega Semiconductor, Inc.	MOSFET N-CH 30V 25A/28A 8DFN	943
FQD1N80TM Sanyo Semiconductor/ON Semiconductor	MOSFET N-CH 800V 1A DPAK	1566

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS