Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
SH8M31GZETB ROHM Semiconductor	SH8M31 IS A POWER MOSFET WITH LO	2426
SH8M2TB1 ROHM Semiconductor	MOSFET N/P-CH 30V 3.5A SOP8	174
SH8KA7GZETB ROHM Semiconductor	SH8KA7 IS LOW ON-RESISTANCE AND	2135
SH8J65TB1 ROHM Semiconductor	MOSFET 2P-CH 30V 7A SOP8	2411
SH8M41TB1 ROHM Semiconductor	MOSFET N/P-CH 80V 3.4A/2.6A SOP8	2290
TT8J3TR ROHM Semiconductor	4V DRIVE PCH+PCH MOSFET	44
SH8J66TB1 ROHM Semiconductor	MOSFET 2P-CH 30V 9A SOP8	4413
SP8M10FRATB ROHM Semiconductor	4V DRIVE NCH+PCH MOSFET (AEC-Q10	2465
EM6K33T2R ROHM Semiconductor	MOSFET 2N-CH 50V 0.2A EMT6	7480
TT8J2TR ROHM Semiconductor	MOSFET 2P-CH 30V 2.5A TSST8	6348
QS8K11TCR ROHM Semiconductor	4V DRIVE NCH+NCH MOSFET	4
BSM300D12P2E001 ROHM Semiconductor	MOSFET 2N-CH 1200V 300A	7
SH8KA2GZETB ROHM Semiconductor	30V NCH+NCH MIDDLE POWER MOSFET	1846
SH8K15TB1 ROHM Semiconductor	MOSFET 2N-CH 30V 9A 8SOP	0
QH8M22TCR ROHM Semiconductor	QH8M22 IS THE HIGH RELIABILITY T	5680
UT6MA3TCR ROHM Semiconductor	20V NCH+PCH MIDDLE POWER MOSFET	6850
SH8K3TB1 ROHM Semiconductor	MOSFET 2N-CH 30V 7A SOP8	1563
QS8M12TCR ROHM Semiconductor	MOSFET N/P-CH 30V 4A TSMT8	0
US6M11TR ROHM Semiconductor	MOSFET N/P-CH 20V/12V TUMT6	10334
QS8K13TCR ROHM Semiconductor	MOSFET 2N-CH 30V 6A TSMT8	255

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies