Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
SP8M21FRATB ROHM Semiconductor	4V DRIVE NCH+PCH MOSFET (CORRESP	2500
QH8K22TCR ROHM Semiconductor	QH8K22 IS LOW ON - RESISTANCE MO	3999
VT6M1T2CR ROHM Semiconductor	MOSFET N/P-CH 20V 0.1A VMT6	0
SH8K39GZETB ROHM Semiconductor	4V DRIVE NCH+NCH MOSFET. SH8K39	2314
UM6K34NTCN ROHM Semiconductor	MOSFET 2N-CH 50V 0.2A UMT6	40405
SP8K24FRATB ROHM Semiconductor	4V DRIVE NCH+NCH MOSFET (CORRESP	2214
SP8M5FRATB ROHM Semiconductor	4V DRIVE NCH+PCH MOSFET	1475
SP8K22FRATB ROHM Semiconductor	4V DRIVE NCH+NCH MOSFET (CORRESP	2442
QS8J1TR ROHM Semiconductor	MOSFET 2P-CH 12V 4.5A TSMT8	1804
US6K1TR ROHM Semiconductor	MOSFET 2N-CH 30V 1.5A TUMT6	6456
SH8K10SGZETB ROHM Semiconductor	SH8K10S IS A POWER MOSFET WITH L	2475
HP8MA2TB1 ROHM Semiconductor	HP8MA2 IS LOW ON-RESISTANCE AND	2467
QS8J4TR ROHM Semiconductor	MOSFET 2P-CH 30V 4A TSMT8	5143
SP8M3TB ROHM Semiconductor	MOSFET N/P-CH 30V 5A/4.5A 8SOIC	0
SH8K4TB1 ROHM Semiconductor	MOSFET 2N-CH 30V 9A SOP8	1543
BSM180D12P3C007 ROHM Semiconductor	SIC POWER MODULE	11
TT8J11TCR ROHM Semiconductor	MOSFET 2P-CH 12V 3.5A TSST8	2380
SH8K41GZETB ROHM Semiconductor	MOSFET 2N-CH 80V 3.4A 8SOP	775
SH8M14TB1 ROHM Semiconductor	MOSFET N/P-CH 30V 9A/7A SOP	0
SH8J62TB1 ROHM Semiconductor	MOSFET 2P-CH 30V 4.5A SOP8	420

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies