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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SP8M51TB1

SP8M51TB1

ROHM Semiconductor

MOSFET N/P-CH 100V 3A/2.5A SOP8

25
UT6JA2TCR

UT6JA2TCR

ROHM Semiconductor

-30V PCH+PCH MIDDLE POWER MOSFET

4010
QH8MA3TCR

QH8MA3TCR

ROHM Semiconductor

MOSFET N/P-CH 30V TSMT8

2
EM6K7T2R

EM6K7T2R

ROHM Semiconductor

MOSFET 2N-CH 20V 0.2A EMT6

65390
TT8M1TR

TT8M1TR

ROHM Semiconductor

MOSFET N/P-CH 20V 2.5A TSST8

48005
SP8K32FRATB

SP8K32FRATB

ROHM Semiconductor

4V DRIVE NCH+NCH MOSFET (CORRESP

2486
SP8K33FRATB

SP8K33FRATB

ROHM Semiconductor

4V DRIVE NCH+NCH MOSFET (CORRESP

2324
SH8M41GZETB

SH8M41GZETB

ROHM Semiconductor

MOSFET N/P-CH 80V 3.4A/2.6A 8SOP

0
SH8K32GZETB

SH8K32GZETB

ROHM Semiconductor

4V DRIVE NCH+NCH MOSFET. COMPLEX

0
QS6K1TR

QS6K1TR

ROHM Semiconductor

MOSFET 2N-CH 30V 1A TSMT6

10180
UM6K33NTN

UM6K33NTN

ROHM Semiconductor

MOSFET 2N-CH 50V 0.2A UMT6

45636
SP8J5FRATB

SP8J5FRATB

ROHM Semiconductor

4V DRIVE PCH+PCH MOSFET (CORRESP

2330
QS8J13TR

QS8J13TR

ROHM Semiconductor

MOSFET 2P-CH 12V 5.5A TSMT8

5227
UT6JC5TCR

UT6JC5TCR

ROHM Semiconductor

-60V DUAL PCH+PCH, DFN2020, POWE

0
SH8MA3TB1

SH8MA3TB1

ROHM Semiconductor

SH8MA3TB1 IS LOW ON-RESISTANCE A

4859
EM6K34T2CR

EM6K34T2CR

ROHM Semiconductor

MOSFET 2N-CH 50V 0.2A EMT6

203991
SH8M3TB1

SH8M3TB1

ROHM Semiconductor

MOSFET N/P-CH 30V 5A/4.5A SOP8

4702
SH8JB5TB1

SH8JB5TB1

ROHM Semiconductor

-40V DUAL PCH+PCH, SOP8, POWER M

0
SH8JC5TB1

SH8JC5TB1

ROHM Semiconductor

-60V DUAL PCH+PCH, SOP8, POWER M

100
UM6K1NTN

UM6K1NTN

ROHM Semiconductor

MOSFET 2N-CH 30V .1A SOT-363

15585

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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