Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
EM5K5T2R ROHM Semiconductor	MOSFET 2N-CH 30V 0.3A EMT5	12817
TT8J13TCR ROHM Semiconductor	MOSFET 2P-CH 12V 2.5A TSST8	341
SH8M51GZETB ROHM Semiconductor	4V DRIVE NCH+PCH MOSFET. SH8M51	2500
SH8K51GZETB ROHM Semiconductor	4V DRIVE NCH+NCH MOSFET. SH8K51	2500
TT8K11TCR ROHM Semiconductor	MOSFET 2N-CH 30V 3A TSST8	2189
US6M1TR ROHM Semiconductor	MOSFET N/P-CH 30V/20V TUMT6	21
UT6JB5TCR ROHM Semiconductor	-40V DUAL PCH+PCH, DFN2020, POWE	0
SP8K3FRATB ROHM Semiconductor	30V NCH+NCH POWER MOSFET - SP8K3	2434
SP8K1FRATB ROHM Semiconductor	30V NCH+NCH POWER MOSFET - SP8K1	2480
SH8KA1GZETB ROHM Semiconductor	SH8KA1 IS A POWER TRANSISTOR WIT	610
QH8JC5TCR ROHM Semiconductor	-60V DUAL PCH+PCH SMALL SIGNAL M	50
UT6K30TCR ROHM Semiconductor	UT6K30 IS LOW ON - RESISTANCE AN	4737
UM6J1NTN ROHM Semiconductor	MOSFET 2P-CH 30V 0.2A UMT6	8972
QS6J1TR ROHM Semiconductor	MOSFET 2P-CH 20V 1.5A TSMT6	884
SH8K5TB1 ROHM Semiconductor	MOSFET 2N-CH 30V 3.5A SOP8	2520
SH8KA4TB ROHM Semiconductor	30V NCH+NCH MIDDLE POWER MOSFET	9549
HP8K24TB ROHM Semiconductor	HP8K24 IS THE HIGH RELIABILITY T	3834
BSM120D12P2C005 ROHM Semiconductor	MOSFET 2N-CH 1200V 120A MODULE	33
SH8K22TB1 ROHM Semiconductor	MOSFET 2N-CH 45V 4.5A SOP8	18
QS6M4TR ROHM Semiconductor	MOSFET N/P-CH 30V/20V 1.5A TSMT6	513

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies