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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SH8K12TB1

SH8K12TB1

ROHM Semiconductor

MOSFET 2N-CH 30V 5A 8SOP

0
SP8K52FRATB

SP8K52FRATB

ROHM Semiconductor

4V DRIVE NCH+NCH MOSFET

556
TT8J21TR

TT8J21TR

ROHM Semiconductor

MOSFET 2P-CH 20V 2.5A TSST8

5932
QS8M51TR

QS8M51TR

ROHM Semiconductor

MOSFET N/P-CH 100V 2A/1.5A TSMT8

14462
QS6J11TR

QS6J11TR

ROHM Semiconductor

MOSFET 2P-CH 12V 2A TSMT6

1599
UT6MA2TCR

UT6MA2TCR

ROHM Semiconductor

UT6MA2 IS SMALL SURFACE MOUNT PA

17876
QH8KA4TCR

QH8KA4TCR

ROHM Semiconductor

30V NCH+NCH MIDDLE POWER MOSFET

5579
SH8K52GZETB

SH8K52GZETB

ROHM Semiconductor

100V NCH+NCH POWER MOSFET. SH8K5

1607
SP8J66FRATB

SP8J66FRATB

ROHM Semiconductor

SP8J66FRA IS THE HIGH RELIABILIT

2500
US6M2GTR

US6M2GTR

ROHM Semiconductor

2.5V DRIVE NCH+PCH MOSFET, 6 PIN

994
QS6J3TR

QS6J3TR

ROHM Semiconductor

MOSFET 2P-CH 20V 1.5A TSMT6

0
SH8M24TB1

SH8M24TB1

ROHM Semiconductor

MOSFET N/P-CH 45V 4.5A/3.5A SOP8

1640
QS6K21TR

QS6K21TR

ROHM Semiconductor

MOSFET 2N-CH 45V 1A TSMT6

12271
SH8M5TB1

SH8M5TB1

ROHM Semiconductor

MOSFET N/P-CH 30V 6A/7A SOP8

211
EM6M2T2R

EM6M2T2R

ROHM Semiconductor

MOSFET N/P-CH 20V 0.2A EMT6

76509
QS8J12TCR

QS8J12TCR

ROHM Semiconductor

MOSFET 2P-CH 12V 4.5A TSMT8

0
SH8M4TB1

SH8M4TB1

ROHM Semiconductor

MOSFET N/P-CH 30V 9A/7A 8SOIC

0
UM6K31NFHATCN

UM6K31NFHATCN

ROHM Semiconductor

2.5V DRIVE NCH+NCH MOSFET

4901
BSM180D12P2C101

BSM180D12P2C101

ROHM Semiconductor

MOSFET 2N-CH 1200V 180A MODULE

9
QH8K26TR

QH8K26TR

ROHM Semiconductor

QH8K26 IS LOW ON-RESISTANCE AND

2750

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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