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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
AON3818

AON3818

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 24V 8A

0
AOTS32338C

AOTS32338C

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 6-TSOP

0
AON2802

AON2802

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 2A 6DFN

0
AOSD32334C

AOSD32334C

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 8-SOIC

897
AO6802

AO6802

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 3.5A 6-TSOP

0
AO8810

AO8810

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 7A 8-TSSOP

0
AON6906A

AON6906A

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 9.1A/10A 8DFN

0
AON6998

AON6998

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 19A/26A DFN

1458
AOE6936

AOE6936

Alpha and Omega Semiconductor, Inc.

MOSFET 2 N-CH 30V 55A/85A 8DFN

0
AO4892

AO4892

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 100V 4A 8SOIC

0
AO4832

AO4832

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 10A 8SOIC

0
AOD661

AOD661

Alpha and Omega Semiconductor, Inc.

MOSFET 2 N-CH 30V 12A TO252-4L

0
AO4884

AO4884

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 40V 10A 8SOIC

0
AO4886

AO4886

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 100V 3.3A 8SOIC

479
AON6926

AON6926

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 11A/12A 8DFN

0
AON2812

AON2812

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 4.5A

0
AON7810

AON7810

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 6A 8DFN

1385
AON7934

AON7934

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 13A/15A 8DFN

0
AO6800

AO6800

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 3.4A 6-TSOP

0
AON6946

AON6946

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 14A/18A 8DFN

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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