Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
AON7804

AON7804

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 9A 8DFN

0

AO4840E

AO4840E

Alpha and Omega Semiconductor, Inc.

MOSFET 2 N-CHANNEL 40V 6A 8SOIC

0

AO4612

AO4612

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 60V 8-SOIC

0

AOTE32136C

AOTE32136C

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 8TSSOP

0

AON4803

AON4803

Alpha and Omega Semiconductor, Inc.

MOSFET 2P-CH 20V 3.4A DFN3X2

0

AO7800

AO7800

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V SC70-6

0

AON7611

AON7611

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 30V 9A/18.5A 8DFN

20863

AO4627

AO4627

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 30V 8SOIC

0

AO4862

AO4862

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 4.5A

0

AON2803

AON2803

Alpha and Omega Semiconductor, Inc.

MOSFET 2P-CH 20V 3.8A 6DFN

0

AONY36352

AONY36352

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 8DFN

0

AOE6932

AOE6932

Alpha and Omega Semiconductor, Inc.

MOSFET 2 N-CH 30V 55A/85A 8DFN

0

AON3814

AON3814

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 6A 8DFN

0

AOD603A

AOD603A

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 60V TO252-4L

0

AO4812

AO4812

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 6A

0

AO4828

AO4828

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 60V 4.5A 8-SOIC

0

AO6608

AO6608

Alpha and Omega Semiconductor, Inc.

MOSFET ARRAY N/P-CH 30/20V 6TSOP

30922

AOC2870

AOC2870

Alpha and Omega Semiconductor, Inc.

MOSFET 2 N-CHANNEL 4DFN

0

AO4629

AO4629

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 30V 6A/5.5A 8SOIC

4163

AOSD21307

AOSD21307

Alpha and Omega Semiconductor, Inc.

30V DUAL P-CHANNEL MOSFET

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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