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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
AON2801

AON2801

Alpha and Omega Semiconductor, Inc.

MOSFET 2P-CH 20V 3A DFN2X2-6L

0
AO4822A

AO4822A

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 8A 8SOIC

0
AON3611

AON3611

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 30V 5A/6A 8DFN

0
AO4614B

AO4614B

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 40V 6A/5A 8SOIC

162
AO4862E

AO4862E

Alpha and Omega Semiconductor, Inc.

MOSFET 2 N-CH 30V 4.5A 8SOIC

0
AOD609G

AOD609G

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH TO252-4

0
AON2810

AON2810

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 2A 6DFN

0
AON5820

AON5820

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 10A 6DFN

0
AOSD21311C

AOSD21311C

Alpha and Omega Semiconductor, Inc.

MOSFET 2P-CH 8-SOIC

4050
AONY36354

AONY36354

Alpha and Omega Semiconductor, Inc.

30V DUAL ASYMMETRIC N-CHANNEL MO

0
AOD609

AOD609

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 40V 12A TO252-4

0
AO6601

AO6601

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 30V 6-TSOP

0
AONX38168

AONX38168

Alpha and Omega Semiconductor, Inc.

25V DUAL ASYMMETRIC N-CHANNEL XS

2810
AON6992

AON6992

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 19A/31A

0
AO4630

AO4630

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 30V 8-SOIC

1094
AO8808A

AO8808A

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 7.9A 8TSSOP

0
AOC3862

AOC3862

Alpha and Omega Semiconductor, Inc.

MOSFET 2 N-CHANNEL 6DFN

0
AONP36336

AONP36336

Alpha and Omega Semiconductor, Inc.

30V DUAL ASYMMETRIC N-CHANNEL MO

0
AOCA32108E

AOCA32108E

Alpha and Omega Semiconductor, Inc.

12V COMMON-DRAIN DUAL N-CHANNEL

0
AOCA24106E

AOCA24106E

Alpha and Omega Semiconductor, Inc.

MOSFET LV N-CH 4DFN 1.9X1.6

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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