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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
AON6816

AON6816

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 17A DFN5X6

285
AON6812

AON6812

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 27A 8-DFN

0
AO4842

AO4842

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 7.7A 8-SOIC

41854
AON3820

AON3820

Alpha and Omega Semiconductor, Inc.

MOSFET 2 N-CHANNEL 24V 8A 8DFN

0
AON3816

AON3816

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 4A 8-DFN

0
AO4854

AO4854

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 8A 8SOIC

0
AO6604

AO6604

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 20V 6-TSOP

667
AON6850

AON6850

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 100V 5A 8DFN

0
AOSD32338C

AOSD32338C

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 8SOIC

0
AON6994

AON6994

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 19A/26A

2056
AO8822

AO8822

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 7A 8-TSSOP

0
AON6996

AON6996

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 50A/60A DFN

0
AON6980

AON6980

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 18A/27A 8DFN

0
AOE6930

AOE6930

Alpha and Omega Semiconductor, Inc.

MOSFET 2 N-CH 30V 22A/85A 8DFN

0
AO4620

AO4620

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 30V 8-SOIC

0
AOC2806

AOC2806

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH

421
AO9926C

AO9926C

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 7.6A 8SOIC

0
AO4818B

AO4818B

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 8A 8-SOIC

110359
AON5816

AON5816

Alpha and Omega Semiconductor, Inc.

MOSFET 2 N-CHANNEL 20V 12A 6DFN

0
AO8820

AO8820

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 7A 8-TSSOP

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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