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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
AO4805

AO4805

Alpha and Omega Semiconductor, Inc.

MOSFET 2P-CH 30V 9A 8-SOIC

46880
AO4813

AO4813

Alpha and Omega Semiconductor, Inc.

MOSFET 2P-CH 30V 7.1A 8SOIC

4548
AO4806

AO4806

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 9.4A 8-SOIC

0
AO4611

AO4611

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 60V 8SOIC

405
AO4840

AO4840

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 40V 6A 8-SOIC

73122
AO4807

AO4807

Alpha and Omega Semiconductor, Inc.

MOSFET 2P-CH 30V 6A 8-SOIC

0
AOC2804B

AOC2804B

Alpha and Omega Semiconductor, Inc.

MOSFET 2 N-CHANNEL 4DFN

0
AO8814

AO8814

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 7.5A 8TSSOP

0
AON6912A

AON6912A

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 10A/13.8A 8DFN

0
AON6810

AON6810

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 25A 8-DFN

0
AOTE21115C

AOTE21115C

Alpha and Omega Semiconductor, Inc.

MOSFET 2P-CH 8TSSOP

0
AO6808

AO6808

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 4.6A 6TSOP

0
AOSD62666E

AOSD62666E

Alpha and Omega Semiconductor, Inc.

MOSFET 2 N-CH 60V 9.5A 8SOIC AOSD62666E

16173
AON6932A

AON6932A

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 30V 22A/36A 8DFN

0
AOC2804

AOC2804

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH

0
AO6804A

AO6804A

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 5A 6TSOP

0
AO6602L

AO6602L

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 30V 6-TSOP

0
AO9926B

AO9926B

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 20V 7.6A 8-SOIC

0
AOD607A

AOD607A

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 30V 8A/12A TO252-4

0
AON6884

AON6884

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 40V 9A DFN5X6

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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