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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
IPG20N06S415ATMA1

IPG20N06S415ATMA1

IR (Infineon Technologies)

IPG20N06S4-15- 55V-60V N-CHANNEL

0
IPP50R350CP

IPP50R350CP

IR (Infineon Technologies)

COOLMOS 10A, 500V N-CHANNEL

4000
FF11MR12W1M1B11BOMA1

FF11MR12W1M1B11BOMA1

IR (Infineon Technologies)

MOSFET 2N-CH 1200V 100A MODULE

24
IPG20N06S4L11ATMA2

IPG20N06S4L11ATMA2

IR (Infineon Technologies)

MOSFET_)40V 60V)

4975
BSG0811NDATMA1

BSG0811NDATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 25V 19A/41A 8TISON

7605
SPA20N60CFD

SPA20N60CFD

IR (Infineon Technologies)

POWER FIELD-EFFECT TRANSISTOR, 2

111
BSC0910NDIATMA1

BSC0910NDIATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 25V 16A/31A TISON8

4436
IPG20N06S4L11AATMA1

IPG20N06S4L11AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 8TDSON

0
IRF40H233XTMA1

IRF40H233XTMA1

IR (Infineon Technologies)

TRENCH <= 40V

3900
FF6MR12W2M1B11BOMA1

FF6MR12W2M1B11BOMA1

IR (Infineon Technologies)

MOSFET MODULE 1200V 200A

60
BSC076N04NDATMA1

BSC076N04NDATMA1

IR (Infineon Technologies)

TRENCH <= 40V

5050
IPI60R190C6

IPI60R190C6

IR (Infineon Technologies)

COOLMOS N-CHANNEL POWER MOSFET

914
BSG0813NDIATMA1

BSG0813NDIATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 25V 19A/33A TISON8

0
IRF7306TRPBF

IRF7306TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 30V 3.6A 8-SOIC

22455
BSO330N02KGFUMA1

BSO330N02KGFUMA1

IR (Infineon Technologies)

SMALL SIGNAL N-CHANNEL MOSFET

0
IPG20N06S3L-35

IPG20N06S3L-35

IR (Infineon Technologies)

MOSFET 2N-CH 55V 20A TDSON-8

0
BSZ105N04NSG

BSZ105N04NSG

IR (Infineon Technologies)

OPTLMOS POWER-MOSFET

63001
IPA60R280E6

IPA60R280E6

IR (Infineon Technologies)

600V 0.28OHM N-CHANNEL MOSFET

1388
BSC0911NDATMA1

BSC0911NDATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 25V 18A/30A TISON8

6558
BSO350N03

BSO350N03

IR (Infineon Technologies)

SMALL SIGNAL N-CHANNEL MOSFET

3811

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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