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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
IRF7351TRPBF

IRF7351TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 60V 8A 8-SOIC

13311
IRF7328TRPBF

IRF7328TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 30V 8A 8-SOIC

3484
IPP60R280E6

IPP60R280E6

IR (Infineon Technologies)

COOLMOS N-CHANNEL POWER MOSFET

0
IPG20N06S2L35ATMA1

IPG20N06S2L35ATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 55V 20A 8TDSON

3944
IRF7301TRPBF

IRF7301TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 20V 5.2A 8-SOIC

0
IRF8910PBF

IRF8910PBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

0
IPG20N04S4L07AATMA1

IPG20N04S4L07AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 8TDSON

4558
IPG20N06S2L50AATMA1

IPG20N06S2L50AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 55V 20A 8TDSON

0
IPB65R280E6

IPB65R280E6

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

10000
IRF7103TRPBF

IRF7103TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 50V 3A 8-SOIC

9291
IPI100N12S305AKSA1

IPI100N12S305AKSA1

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

38500
BSG0810NDIATMA1

BSG0810NDIATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 25V 19A/39A 8TISON

0
BSO211PH

BSO211PH

IR (Infineon Technologies)

3.2A, 20V, 0.067OHM, 2-ELEMENT,

2500
BSC750N10NDGATMA1

BSC750N10NDGATMA1

IR (Infineon Technologies)

PFET, 3.2A I(D), 100V, 0.075OHM,

2624
IPG20N06S4L14ATMA2

IPG20N06S4L14ATMA2

IR (Infineon Technologies)

MOSFET 2N-CH 60V 20A 8TDSON

0
BSO220N03MDGXUMA1

BSO220N03MDGXUMA1

IR (Infineon Technologies)

MOSFET 2N-CH 30V 6A 8DSO

24525
IPG20N06S4L14AATMA1

IPG20N06S4L14AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 60V 20A 8TDSON

0
AUIRF7303QTR

AUIRF7303QTR

IR (Infineon Technologies)

PFET, 4.9A I(D), 30V, 0.05OHM, 2

15787
FS45MR12W1M1B11BOMA1

FS45MR12W1M1B11BOMA1

IR (Infineon Technologies)

MOSFET MODULE 1200V 50A

58
2N7002DWH6327XTSA1

2N7002DWH6327XTSA1

IR (Infineon Technologies)

MOSFET 2N-CH 60V 0.3A SOT363

69266

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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