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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
IRF7324TRPBF

IRF7324TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 20V 9A 8-SOIC

16456
IPG20N06S2L65ATMA1

IPG20N06S2L65ATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 55V 20A TDSON-8-4

5000
BSL215PL6327

BSL215PL6327

IR (Infineon Technologies)

P-CHANNEL MOSFET

6881
IRF7331TRPBF

IRF7331TRPBF

IR (Infineon Technologies)

7A, 20V, N CHANNEL, MOSFET

0
BSC155N06NDATMA1

BSC155N06NDATMA1

IR (Infineon Technologies)

TRENCH 40<-<100V

3962
IRF7301PBF

IRF7301PBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

0
SPP03N60C3

SPP03N60C3

IR (Infineon Technologies)

COOLMOS N-CHANNEL POWER MOSFET

83121
BSO150N03

BSO150N03

IR (Infineon Technologies)

SMALL SIGNAL N-CHANNEL MOSFET

6222
IPG20N10S4L22AATMA1

IPG20N10S4L22AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 100V 20A TDSON-8

0
IPG20N06S2L50ATMA1

IPG20N06S2L50ATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 55V 20A 8TDSON

0
SP000629364

SP000629364

IR (Infineon Technologies)

IPP60R950C6 - 600V N-CHANNEL

0
FF45MR12W1M1B11BOMA1

FF45MR12W1M1B11BOMA1

IR (Infineon Technologies)

MOSFET MODULE 1200V 50A

31
BSO303P

BSO303P

IR (Infineon Technologies)

P-CHANNEL POWER MOSFET

0
IPG20N04S412AATMA1

IPG20N04S412AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 40V 20A 8TDSON

0
IRF7311PBF

IRF7311PBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

2565
BSO200N03

BSO200N03

IR (Infineon Technologies)

SMALL SIGNAL N-CHANNEL MOSFET

357
IRFHS9351TRPBF

IRFHS9351TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 30V 2.3A PQFN

7325
AUIRF7309QTR

AUIRF7309QTR

IR (Infineon Technologies)

MOSFET N/P-CH 30V 4A/3A 8SO

6936
BSC112N06LDATMA1

BSC112N06LDATMA1

IR (Infineon Technologies)

TRENCH 40<-<100V

10116
IRF7907TRPBF

IRF7907TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 9.1A/11A 8SO

7498

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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