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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
FF3MR12KM1PHOSA1

FF3MR12KM1PHOSA1

IR (Infineon Technologies)

MEDIUM POWER 62MM

0
IRF7329TRPBF

IRF7329TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 12V 9.2A 8-SOIC

194
BSZ215CHXTMA1

BSZ215CHXTMA1

IR (Infineon Technologies)

MOSFET N/P-CH 20V 8TSDSON

0
IRL6297SDTRPBF

IRL6297SDTRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 20V 15A DIRECTFET

0
IRF7104TRPBF

IRF7104TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 20V 2.3A 8-SOIC

4077
IRFH4257DTRPBF

IRFH4257DTRPBF

IR (Infineon Technologies)

IRFH4257 - HEXFET POWER MOSFET

2502
BSO4804HUMA2

BSO4804HUMA2

IR (Infineon Technologies)

DIODE ARRAY 2N-CHANNEL, 30V, 8A

7500
IRF7317PBF

IRF7317PBF

IR (Infineon Technologies)

IRF7317 - SMALL SIGNAL MOSFET

895
AUIRFU8403-701TRL

AUIRFU8403-701TRL

IR (Infineon Technologies)

AUTOMOTIVE HEXFET POWER MOSFET

11512
IRF7304TRPBF

IRF7304TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 20V 4.3A 8-SOIC

9600
IPA60R190E6

IPA60R190E6

IR (Infineon Technologies)

600V 0.19OHM N-CHANNEL MOSFET

157
BSO203P

BSO203P

IR (Infineon Technologies)

P-CHANNEL POWER MOSFET

421
BSL316CL6327

BSL316CL6327

IR (Infineon Technologies)

P-CHANNEL MOSFET

0
SPA15N65C3

SPA15N65C3

IR (Infineon Technologies)

POWER FIELD-EFFECT TRANSISTOR, 1

113600
IRF7904TRPBF

IRF7904TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 7.6A/11A 8-SOIC

0
IPG20N06S415ATMA2

IPG20N06S415ATMA2

IR (Infineon Technologies)

MOSFET 2N-CH 8TDSON

0
IRF7304

IRF7304

IR (Infineon Technologies)

MOSFET 2P-CH 20V 4.3A 8-SOIC

28473
BSL214NL6327HTSA1

BSL214NL6327HTSA1

IR (Infineon Technologies)

SMALL SIGNAL N-CHANNEL MOSFET

0
FF2MR12KM1HOSA1

FF2MR12KM1HOSA1

IR (Infineon Technologies)

MEDIUM POWER 62MM

16
IRF7105TRPBF

IRF7105TRPBF

IR (Infineon Technologies)

MOSFET N/P-CH 25V 8-SOIC

7695

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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