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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
FF8MR12W2M1B11BOMA1

FF8MR12W2M1B11BOMA1

IR (Infineon Technologies)

MOSFET 2N-CH 1200V AG-EASY2BM-2

45
DF23MR12W1M1B11BPSA1

DF23MR12W1M1B11BPSA1

IR (Infineon Technologies)

MOSFET MOD 1200V 25A

69
BSO330N02KG

BSO330N02KG

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

2746
IRF7304PBF

IRF7304PBF

IR (Infineon Technologies)

AUTOMOTIVE HEXFET P-CHANNEL

1913
SPS01N60C3BKMA1

SPS01N60C3BKMA1

IR (Infineon Technologies)

0.8A, 600V, N-CHANNEL MOSFET, T

30000
AUIRFN8458TR

AUIRFN8458TR

IR (Infineon Technologies)

MOSFET 2N-CH 40V 43A 8PQFN

0
IRF7307TRPBF

IRF7307TRPBF

IR (Infineon Technologies)

MOSFET N/P-CH 20V 8-SOIC

0
IPP120N04S3-02

IPP120N04S3-02

IR (Infineon Technologies)

PFET, 120A I(D), 40V, 0.0023OHM,

31255
IPG16N10S4L61AATMA1

IPG16N10S4L61AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 100V 16A 8TDSON

0
IPD65R600E6

IPD65R600E6

IR (Infineon Technologies)

COOLMOS N-CHANNEL POWER MOSFET

34028
BSO615CGHUMA1

BSO615CGHUMA1

IR (Infineon Technologies)

PFET, 3.1A I(D), 60V, 0.11OHM, 2

6253
SPP15P10PH

SPP15P10PH

IR (Infineon Technologies)

15A, 100V, 0.24OHM, P-CHANNEL,

944
IRF7509TRPBF

IRF7509TRPBF

IR (Infineon Technologies)

MOSFET N/P-CH 30V 2.7A/2A MICRO8

14888
IPG16N10S461AATMA1

IPG16N10S461AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 100V 16A 8TDSON

0
IRF7380TRPBF

IRF7380TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 80V 3.6A 8-SOIC

17847
IRF7101PBF

IRF7101PBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

3542
IRF7101TRPBF

IRF7101TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 20V 3.5A 8-SOIC

22
IRF7314TRPBF

IRF7314TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 20V 5.3A 8-SOIC

95
IPG20N06S2L35AATMA1

IPG20N06S2L35AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 55V 2A 8TDSON

14333
BSC0923NDIATMA1

BSC0923NDIATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 30V 17A/32A TISON8

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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