ample-chip ample-chip
RFQ
BOM

Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
IRF7350PBF

IRF7350PBF

IR (Infineon Technologies)

MOSFET N/P-CH 100V 8SOIC

0
IRF7750

IRF7750

IR (Infineon Technologies)

MOSFET 2P-CH 20V 4.7A 8-TSSOP

0
IRF7752TRPBF

IRF7752TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 4.6A 8TSSOP

0
IRF5850TRPBF

IRF5850TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 20V 2.2A 6-TSOP

0
IRF7504TR

IRF7504TR

IR (Infineon Technologies)

MOSFET 2P-CH 20V 1.7A MICRO8

0
IRF7389TR

IRF7389TR

IR (Infineon Technologies)

MOSFET N/P-CH 30V 8-SOIC

0
IRF7325PBF

IRF7325PBF

IR (Infineon Technologies)

MOSFET 2P-CH 12V 7.8A 8-SOIC

0
IRFI4019HG-117P

IRFI4019HG-117P

IR (Infineon Technologies)

MOSFET 2N-CH 150V 8.7A TO-220FP

0
IRF7507PBF

IRF7507PBF

IR (Infineon Technologies)

MOSFET N/P-CH DUAL 20V MICRO-8

0
IRF9910

IRF9910

IR (Infineon Technologies)

MOSFET 2N-CH 20V 10A 8-SOIC

0
IRF7313TRPBF-1

IRF7313TRPBF-1

IR (Infineon Technologies)

MOSFET 2N-CH 30V 8-SOIC

0
IRF9952PBF

IRF9952PBF

IR (Infineon Technologies)

MOSFET N/P-CH 30V 8-SOIC

0
IRF7904TRPBF-1

IRF7904TRPBF-1

IR (Infineon Technologies)

MOSFET 2N-CH 30V 7.6A/11A 8-SOIC

0
IRF7331TR

IRF7331TR

IR (Infineon Technologies)

MOSFET 2N-CH 20V 7A 8-SOIC

0
IRF7757TRPBF

IRF7757TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 20V 4.8A 8TSSOP

0
IRF7338PBF

IRF7338PBF

IR (Infineon Technologies)

MOSFET N/P-CH 12V 6.3A/3A 8-SOIC

0
BSD235C L6327

BSD235C L6327

IR (Infineon Technologies)

MOSFET N/P-CH 20V SOT-363

0
AUIRF7303Q

AUIRF7303Q

IR (Infineon Technologies)

MOSFET 2N-CH 30V 5.3A 8SOIC

0
AUIRF7319Q

AUIRF7319Q

IR (Infineon Technologies)

MOSFET N/P-CH 30V 8SOIC

0
IRF7530PBF

IRF7530PBF

IR (Infineon Technologies)

MOSFET 2N-CH 20V 5.4A MICRO8

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

RFQ BOM Call Skype Email
Top