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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
IRF7755TR

IRF7755TR

IR (Infineon Technologies)

MOSFET 2P-CH 20V 3.9A 8-TSSOP

0
BSO615N

BSO615N

IR (Infineon Technologies)

MOSFET 2N-CH 60V 2.6A 8SOIC

0
BSO215C

BSO215C

IR (Infineon Technologies)

MOSFET N/P-CH 20V 3.7A 8SOIC

0
IRF7756TR

IRF7756TR

IR (Infineon Technologies)

MOSFET 2P-CH 12V 4.3A 8-TSSOP

0
IRF7751TR

IRF7751TR

IR (Infineon Technologies)

MOSFET 2P-CH 30V 4.5A 8-TSSOP

0
IRF5852TR

IRF5852TR

IR (Infineon Technologies)

MOSFET 2N-CH 20V 2.7A 6-TSOP

0
BSO207PNTMA1

BSO207PNTMA1

IR (Infineon Technologies)

MOSFET 2P-CH 20V 5.7A 8SOIC

0
AUIRF7103Q

AUIRF7103Q

IR (Infineon Technologies)

MOSFET 2N-CH 50V 3A 8SOIC

0
IRF7755

IRF7755

IR (Infineon Technologies)

MOSFET 2P-CH 20V 3.9A 8-TSSOP

0
IRF7902PBF

IRF7902PBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC

0
IRF8915

IRF8915

IR (Infineon Technologies)

MOSFET 2N-CH 20V 8.9A 8-SOIC

0
IRF7103PBF

IRF7103PBF

IR (Infineon Technologies)

MOSFET 2N-CH 50V 3A 8-SOIC

0
IRF7306PBF

IRF7306PBF

IR (Infineon Technologies)

AUTOMOTIVE HEXFET P-CHANNEL

0
IRF7904PBF

IRF7904PBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 7.6A/11A 8SOIC

0
IRF7555TRPBF

IRF7555TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 20V 4.3A MICRO8

0
AUIRF7341Q

AUIRF7341Q

IR (Infineon Technologies)

MOSFET 2N-CH 55V 5.1A 8SOIC

0
IRF8852TRPBF

IRF8852TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 25V 7.8A 8TSSOP

0
BSO4804

BSO4804

IR (Infineon Technologies)

MOSFET 2N-CH 30V 8A 8SOIC

0
IRFI4024H-117P

IRFI4024H-117P

IR (Infineon Technologies)

MOSFET 2N-CH 55V 11A TO-220FP-5

0
IRF7379

IRF7379

IR (Infineon Technologies)

MOSFET N/P-CH 30V 8-SOIC

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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