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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
IRF9956

IRF9956

IR (Infineon Technologies)

MOSFET 2N-CH 30V 3.5A 8-SOIC

0
IRF7350TRPBF

IRF7350TRPBF

IR (Infineon Technologies)

MOSFET N/P-CH 100V 2.1A 8-SOIC

0
IRF9956TR

IRF9956TR

IR (Infineon Technologies)

MOSFET 2N-CH 30V 3.5A 8-SOIC

0
IRF7103Q

IRF7103Q

IR (Infineon Technologies)

MOSFET 2N-CH 50V 3A 8-SOIC

0
IRF7907PBF

IRF7907PBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 9.1A/11A 8SOIC

0
IRF5852TRPBF

IRF5852TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 20V 2.7A 6-TSOP

0
94-3449

94-3449

IR (Infineon Technologies)

MOSFET 2P-CH 55V 3.4A 8-SOIC

0
IRF8910GTRPBF

IRF8910GTRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 20V 10A 8-SOIC

0
IRF9953

IRF9953

IR (Infineon Technologies)

MOSFET 2P-CH 30V 2.3A 8-SOIC

0
IRF7901D1

IRF7901D1

IR (Infineon Technologies)

MOSFET 2N-CH 30V 6.2A 8SOIC

0
IRF5850

IRF5850

IR (Infineon Technologies)

MOSFET 2P-CH 20V 2.2A 6TSOP

0
AUIRF7304Q

AUIRF7304Q

IR (Infineon Technologies)

MOSFET 2P-CH 20V 4A 8SOIC

0
IRF7750TR

IRF7750TR

IR (Infineon Technologies)

MOSFET 2P-CH 20V 4.7A 8-TSSOP

0
IRF6723M2DTRPBF

IRF6723M2DTRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 15A DIRECTFET

0
IRF7324PBF

IRF7324PBF

IR (Infineon Technologies)

MOSFET 2P-CH 20V 9A 8-SOIC

0
IRF7750GTRPBF

IRF7750GTRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 20V 4.7A 8TSSOP

0
IRF5850TR

IRF5850TR

IR (Infineon Technologies)

MOSFET 2P-CH 20V 2.2A 6-TSOP

0
AUIRF7342Q

AUIRF7342Q

IR (Infineon Technologies)

MOSFET 2P-CH 55V 3.4A 8SOIC

0
IRF7379TR

IRF7379TR

IR (Infineon Technologies)

MOSFET N/P-CH 30V 8-SOIC

0
2N7002DW L6327

2N7002DW L6327

IR (Infineon Technologies)

MOSFET 2N-CH 60V 0.3A SOT363

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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