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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
IRF7755TRPBF

IRF7755TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 20V 3.9A 8TSSOP

0
IRF7379PBF

IRF7379PBF

IR (Infineon Technologies)

MOSFET N/P-CH 30V 8-SOIC

0
IRF7751

IRF7751

IR (Infineon Technologies)

MOSFET 2P-CH 30V 4.5A 8-TSSOP

0
BSO615CT

BSO615CT

IR (Infineon Technologies)

MOSFET N/P-CH 60V 3.1A/2A 8SOIC

0
AUIRF7343Q

AUIRF7343Q

IR (Infineon Technologies)

MOSFET N/P-CH 55V 4.7/3.4A 8SOIC

0
BSD223P

BSD223P

IR (Infineon Technologies)

MOSFET 2P-CH 20V 0.39A SOT363

0
IRF7752

IRF7752

IR (Infineon Technologies)

MOSFET 2N-CH 30V 4.6A 8-TSSOP

0
IRF7325

IRF7325

IR (Infineon Technologies)

MOSFET 2P-CH 12V 7.8A 8-SOIC

0
IRF6723M2DTR1P

IRF6723M2DTR1P

IR (Infineon Technologies)

MOSFET 2N-CH 30V 15A DIRECTFET

0
IRF5810

IRF5810

IR (Infineon Technologies)

MOSFET 2P-CH 20V 2.9A 6TSOP

0
IRF7754TR

IRF7754TR

IR (Infineon Technologies)

MOSFET 2P-CH 12V 5.5A 8-TSSOP

0
BSL306NL6327HTSA1

BSL306NL6327HTSA1

IR (Infineon Technologies)

MOSFET 2N-CH 30V 2.3A 6TSOP

0
IRF7910PBF

IRF7910PBF

IR (Infineon Technologies)

MOSFET 2N-CH 12V 10A 8-SOIC

0
AUIRF7309Q

AUIRF7309Q

IR (Infineon Technologies)

MOSFET N/P-CH 30V 4A/3A 8SOIC

0
BSO615NGHUMA1

BSO615NGHUMA1

IR (Infineon Technologies)

MOSFET 2N-CH 60V 2.6A 8SOIC

0
IRF7752GTRPBF

IRF7752GTRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 4.6A 8TSSOP

0
IRF7331TRPBF-1

IRF7331TRPBF-1

IR (Infineon Technologies)

MOSFET 2N-CH 20V 7A 8-SOIC

0
IRF7303PBF

IRF7303PBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 4.9A 8-SOIC

0
IPG20N06S4L14ATMA1

IPG20N06S4L14ATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 8TDSON

0
BSD235N L6327

BSD235N L6327

IR (Infineon Technologies)

MOSFET 2N-CH 20V 0.95A SOT363

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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