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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
BTS7904BATMA1

BTS7904BATMA1

IR (Infineon Technologies)

MOSFET N/P-CH 55V/30V 40A TO263

0
IRF7509TR

IRF7509TR

IR (Infineon Technologies)

MOSFET N/P-CH 30V 2.7A/2A MICRO8

0
BTS7904SAKSA1

BTS7904SAKSA1

IR (Infineon Technologies)

MOSFET N/P-CH 55V/30V 40A TO220

0
BSO612CV

BSO612CV

IR (Infineon Technologies)

MOSFET N/P-CH 60V 3A/2A 8SOIC

0
IRF5851TR

IRF5851TR

IR (Infineon Technologies)

MOSFET N/P-CH 20V 6-TSOP

0
IPG20N06S3L-23

IPG20N06S3L-23

IR (Infineon Technologies)

MOSFET 2N-CH 55V 20A TDSON-8

0
AUIRF7304QTR

AUIRF7304QTR

IR (Infineon Technologies)

MOSFET 2P-CH 20V 4A 8SOIC

0
IRF7504TRPBF

IRF7504TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 20V 1.7A MICRO8

0
IRF7325TRPBF

IRF7325TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 12V 7.8A 8-SOIC

0
IRF7905PBF

IRF7905PBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC

0
IRF8513PBF

IRF8513PBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 8A/11A 8-SOIC

0
IRFH4255DTRPBF

IRFH4255DTRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 25V 64A/105A PQFN

0
IRF7329TR

IRF7329TR

IR (Infineon Technologies)

MOSFET 2P-CH 12V 9.2A 8-SOIC

0
IRF9956PBF

IRF9956PBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 3.5A 8-SOIC

0
IRF7329PBF

IRF7329PBF

IR (Infineon Technologies)

MOSFET 2P-CH 12V 9.2A 8-SOIC

0
IRF7335D1TR

IRF7335D1TR

IR (Infineon Technologies)

MOSFET 2N-CH 30V 10A 14-SOIC

0
IRF5852

IRF5852

IR (Infineon Technologies)

MOSFET 2N-CH 20V 2.7A 6-TSOP

0
IRF7105PBF

IRF7105PBF

IR (Infineon Technologies)

MOSFET N/P-CH 25V 8-SOIC

0
BSL314PEL6327HTSA1

BSL314PEL6327HTSA1

IR (Infineon Technologies)

MOSFET 2P-CH 30V 1.5A 6TSOP

0
IRFI4020H-117P

IRFI4020H-117P

IR (Infineon Technologies)

MOSFET 2N-CH 200V 9.1A TO-220FP

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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