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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
BSL205NH6327XTSA1

BSL205NH6327XTSA1

IR (Infineon Technologies)

MOSFET 2N-CH 20V 2.5A 6TSOP

0
IRF7754GTRPBF

IRF7754GTRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 12V 5.5A 8TSSOP

0
BSL207NH6327XTSA1

BSL207NH6327XTSA1

IR (Infineon Technologies)

MOSFET 2N-CH 20V 2.1A 6TSOP

0
AUIRF7313Q

AUIRF7313Q

IR (Infineon Technologies)

MOSFET 2N-CH 30V 6.5A 8SOIC

0
IRF7754TRPBF

IRF7754TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 12V 5.5A 8TSSOP

0
IRF7316TR

IRF7316TR

IR (Infineon Technologies)

MOSFET 2P-CH 30V 4.9A 8-SOIC

0
IRF7751GTRPBF

IRF7751GTRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 30V 4.5A 8TSSOP

0
IRF7757TR

IRF7757TR

IR (Infineon Technologies)

MOSFET 2N-CH 20V 4.8A TSSOP-8

0
BSC072N03LDGATMA1

BSC072N03LDGATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 30V 11.5A 8TDSON

0
BSO303PNTMA1

BSO303PNTMA1

IR (Infineon Technologies)

MOSFET 2P-CH 30V 8.2A 8DSO

0
BSL207NL6327HTSA1

BSL207NL6327HTSA1

IR (Infineon Technologies)

MOSFET 2N-CH 20V 2.1A 6TSOP

0
BSO4804T

BSO4804T

IR (Infineon Technologies)

MOSFET 2N-CH 30V 8A 8SOIC

0
IRF7106

IRF7106

IR (Infineon Technologies)

MOSFET N/P-CH 20V 3A/2.5A 8-SOIC

0
IRF9362PBF

IRF9362PBF

IR (Infineon Technologies)

MOSFET 2P-CH 30V 8A 8SOIC

0
IRF5810TR

IRF5810TR

IR (Infineon Technologies)

MOSFET 2P-CH 20V 2.9A 6-TSOP

0
IRF8915TR

IRF8915TR

IR (Infineon Technologies)

MOSFET 2N-CH 20V 8.9A 8-SOIC

0
IRF8910GPBF

IRF8910GPBF

IR (Infineon Technologies)

MOSFET 2N-CH 20V 10A 8-SO

0
IRF7389

IRF7389

IR (Infineon Technologies)

MOSFET N/P-CH 30V 8-SOIC

0
IRF9389PBF

IRF9389PBF

IR (Infineon Technologies)

MOSFET N/P-CH 30V 6.8A/4.6A 8-SO

0
IRF7331

IRF7331

IR (Infineon Technologies)

MOSFET 2N-CH 20V 7A 8-SOIC

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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