BSO330N02KG

Manufacturer Part BSO330N02KG
Manufacturer IR (Infineon Technologies)
Description N-CHANNEL POWER MOSFET
Category Discrete Semiconductor | Diodes, Transistor, electronic component–Ample Chip
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 2746 pieces
Shipped from HK warehouse
Expected Shipping Dec 10 - Dec 14 2025
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Product Attributes
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:5.4A
Rds On (Max) @ Id, Vgs:30mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:4.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:730pF @ 10V
Power - Max:1.4W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:PG-DSO-8
More Information
BSO330N02KG
BSO330N02KG
IR (Infineon Technologies) BSO330N02KG is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
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