Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
IRFH4251DTRPBF

IRFH4251DTRPBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

0

AUIRF7103QTR

AUIRF7103QTR

IR (Infineon Technologies)

MOSFET 2N-CH 50V 3A 8SO

0

IPI60R165CP

IPI60R165CP

IR (Infineon Technologies)

COOLMOS N-CHANNEL POWER MOSFET

0

IRF7507TRPBF

IRF7507TRPBF

IR (Infineon Technologies)

MOSFET N/P-CH 20V 1.7A MICRO8

38064

IPG20N04S4L07ATMA1

IPG20N04S4L07ATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 40V 20A 8TDSON

1285

BSO211P

BSO211P

IR (Infineon Technologies)

P-CHANNEL POWER MOSFET

20000

IRF7389TRPBF

IRF7389TRPBF

IR (Infineon Technologies)

MOSFET N/P-CH 30V 8-SOIC

0

DF11MR12W1M1PB11BPSA1

DF11MR12W1M1PB11BPSA1

IR (Infineon Technologies)

MOSFET MODULE 1200V

30

IRF9395MTRPBF

IRF9395MTRPBF

IR (Infineon Technologies)

DIRECTFET DUAL P-CHANNEL POWER M

154058

BSC072N04LDATMA1

BSC072N04LDATMA1

IR (Infineon Technologies)

TRENCH <= 40V

6916

BSL316CH6327XTSA1

BSL316CH6327XTSA1

IR (Infineon Technologies)

MOSFET N/P-CH 30V 1.4A/1.5A TSOP

64475

AUIRF7342QTR

AUIRF7342QTR

IR (Infineon Technologies)

MOSFET 2P-CH 55V 3.4A 8SOIC

3975

IPI80N04S3-03

IPI80N04S3-03

IR (Infineon Technologies)

N-CHANNEL AUTOMOTIVE MOSFET

8000

IPG20N10S4L35AATMA1

IPG20N10S4L35AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 100V 20A 8TDSON

0

BSO612CVGHUMA1

BSO612CVGHUMA1

IR (Infineon Technologies)

3A, 60V, 0.12OHM, 2-ELEMENT, N-

0

BSO150N03MDGXUMA1

BSO150N03MDGXUMA1

IR (Infineon Technologies)

MOSFET 2N-CH 30V 8A 8DSO

12723

IPG20N04S4L11ATMA1

IPG20N04S4L11ATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 40V 20A 8TDSON

2497

DF23MR12W1M1PB11BPSA1

DF23MR12W1M1PB11BPSA1

IR (Infineon Technologies)

MOSFET MODULE 1200V

29

BSL306NH6327XTSA1

BSL306NH6327XTSA1

IR (Infineon Technologies)

BSL306 - 250V-600V SMALL SIGNAL

0

IRF7328PBF

IRF7328PBF

IR (Infineon Technologies)

IRF7328 - 20V-250V P-CHANNEL POW

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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