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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
IRF7104PBF

IRF7104PBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

0
AUIRF7341QTR

AUIRF7341QTR

IR (Infineon Technologies)

MOSFET 2N-CH 55V 5.1A 8SOIC

1928
IPG20N04S409ATMA1

IPG20N04S409ATMA1

IR (Infineon Technologies)

MOSFET N-CHANNEL_30/40V

4995
IPA50R350CP

IPA50R350CP

IR (Infineon Technologies)

10A, 500V, 0.35OHM, N-CHANNEL,

500
IRF7379TRPBF

IRF7379TRPBF

IR (Infineon Technologies)

IRF7379 - PLANAR <=40V

190
IRF7341TRPBF

IRF7341TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 55V 4.7A 8-SOIC

0
IRF7910TRPBF

IRF7910TRPBF

IR (Infineon Technologies)

IRF7910 PLANAR <=40V

4001
IRF7342PBF

IRF7342PBF

IR (Infineon Technologies)

MOSFET 2P-CH 55V 3.4A 8-SOIC

0
AUIRFS4410ZTRL-INF

AUIRFS4410ZTRL-INF

IR (Infineon Technologies)

AUTOMOTIVE HEXFET N CHANNEL

800
BSZ0910NDXTMA1

BSZ0910NDXTMA1

IR (Infineon Technologies)

DIFFERENTIATED MOSFETS

3420
IPG20N04S4L08ATMA1

IPG20N04S4L08ATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 40V 20A 8TDSON

0
IRF3546MTRPBF

IRF3546MTRPBF

IR (Infineon Technologies)

DUAL PHASE POWIRBLOCK

3000
IRF7319PBF

IRF7319PBF

IR (Infineon Technologies)

P-CHANNEL POWER MOSFET

0
IPG20N04S408ATMA1

IPG20N04S408ATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 40V 20A 8TDSON

3442
IRLHS6376TRPBF

IRLHS6376TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 3.6A 6PQFN

28563
IRF7530TRPBF

IRF7530TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 20V 5.4A MICRO8

81062
IRF7316TRPBF

IRF7316TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 30V 4.9A 8SO

12530
IPG20N04S408AATMA1

IPG20N04S408AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 8TDSON

5949
FF6MR12KM1PHOSA1

FF6MR12KM1PHOSA1

IR (Infineon Technologies)

MEDIUM POWER 62MM

0
BSO303PHXUMA1

BSO303PHXUMA1

IR (Infineon Technologies)

7A, 30V, 0.021OHM, 2-ELEMENT, P

6210

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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