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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
IPG20N06S415AATMA1

IPG20N06S415AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 60V 20A 8TDSON

7815
IRF7314PBF

IRF7314PBF

IR (Infineon Technologies)

P-CHANNEL POWER MOSFET

0
BSL316CL6327HTSA1

BSL316CL6327HTSA1

IR (Infineon Technologies)

SMALL SIGNAL P-CHANNEL MOSFET

0
IRF9956TRPBF

IRF9956TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 3.5A 8-SOIC

732
BSL314PEH6327XTSA1

BSL314PEH6327XTSA1

IR (Infineon Technologies)

MOSFET 2P-CH 30V 1.5A 6TSOP

0
IRF9952TRPBF

IRF9952TRPBF

IR (Infineon Technologies)

MOSFET N/P-CH 30V 8-SOIC

56
IRFH7911TRPBF

IRFH7911TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 13A/28A PQFN

0
IRF7389PBF

IRF7389PBF

IR (Infineon Technologies)

P-CHANNEL POWER MOSFET

0
DF11MR12W1M1B11BOMA1

DF11MR12W1M1B11BOMA1

IR (Infineon Technologies)

IGBT MODULE

83
IRFH4253DTRPBF

IRFH4253DTRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 25V 64A/145A PQFN

1015
IRF8313TRPBF

IRF8313TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 9.7A 8SO

11990
IPG20N10S4L35ATMA1

IPG20N10S4L35ATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 8TDSON

14427
DF11MR12W1M1B11BPSA1

DF11MR12W1M1B11BPSA1

IR (Infineon Technologies)

MOSFET MOD 1200V 50A

33
IPA60R600E6

IPA60R600E6

IR (Infineon Technologies)

600V, 0.6OHM, N-CHANNEL, MOSFET

640
IRF7303TRPBF

IRF7303TRPBF

IR (Infineon Technologies)

MOSFET 2N-CH 30V 4.9A 8-SOIC

212
BSL308CH6327XTSA1

BSL308CH6327XTSA1

IR (Infineon Technologies)

MOSFET N/P-CH 30V 2.3A/2A 6TSOP

4987
IRF9910PBF

IRF9910PBF

IR (Infineon Technologies)

N-CHANNEL POWER MOSFET

0
IPG20N10S436AATMA1

IPG20N10S436AATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 100V 20A 8TDSON

2100
IRF9389TRPBF

IRF9389TRPBF

IR (Infineon Technologies)

MOSFET N/P-CH 30V 6.8A/4.6A 8-SO

0
IPA126N10N3G

IPA126N10N3G

IR (Infineon Technologies)

35A, 100V, 0.0126OHM, N-CHANNEL

1450

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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