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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
BSC0993NDATMA1

BSC0993NDATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 17A TISON8

333
BSL308PEH6327XTSA1

BSL308PEH6327XTSA1

IR (Infineon Technologies)

MOSFET 2P-CH 30V 2A 6TSOP

7705
IPB080N03LG

IPB080N03LG

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

666
FF08MR12W1MA1B11ABPSA1

FF08MR12W1MA1B11ABPSA1

IR (Infineon Technologies)

EASY PACK

99
IPB70N12S3L12ATMA1

IPB70N12S3L12ATMA1

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

29000
IRF7342TRPBF

IRF7342TRPBF

IR (Infineon Technologies)

MOSFET 2P-CH 55V 3.4A 8-SOIC

15342
BSZ15DC02KDHXTMA1

BSZ15DC02KDHXTMA1

IR (Infineon Technologies)

MOSFET N/P-CH 20V 5.1/3.2A TDSON

0
IRF7343TRPBF

IRF7343TRPBF

IR (Infineon Technologies)

MOSFET N/P-CH 55V 8-SOIC

3365
FF6MR12KM1BOSA1

FF6MR12KM1BOSA1

IR (Infineon Technologies)

MEDIUM POWER 62MM

0
IPB13N03LBG

IPB13N03LBG

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

999
BSO604NS2XUMA1

BSO604NS2XUMA1

IR (Infineon Technologies)

MOSFET 2N-CH 55V 5A 8DSO

2500
BSC0924NDIATMA1

BSC0924NDIATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 30V 17A/32A TISON8

0
IPI50N12S3L15AKSA1

IPI50N12S3L15AKSA1

IR (Infineon Technologies)

OPTLMOS N-CHANNEL POWER MOSFET

27000
FF2MR12KM1PHOSA1

FF2MR12KM1PHOSA1

IR (Infineon Technologies)

MEDIUM POWER 62MM

0
DF23MR12W1M1B11BOMA1

DF23MR12W1M1B11BOMA1

IR (Infineon Technologies)

EASYPACK MODUL MIT COOLSIC TRENC

0
AUIRF9952QTR

AUIRF9952QTR

IR (Infineon Technologies)

AUIRF9952 HEXFET POWER MOSFET

44000
IPG20N06S4L11ATMA1

IPG20N06S4L11ATMA1

IR (Infineon Technologies)

MOSFET 2N-CH 8TDSON

3956
FF11MR12W1M1PB11BPSA1

FF11MR12W1M1PB11BPSA1

IR (Infineon Technologies)

MOSFET MODULE 1200V DUAL

0
SPU03N60C3

SPU03N60C3

IR (Infineon Technologies)

POWER FIELD-EFFECT TRANSISTOR, 3

532
BSL214NL6327

BSL214NL6327

IR (Infineon Technologies)

SMALL SIGNAL N-CHANNEL MOSFET

8559

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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