Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PBHV9050ZF

PBHV9050ZF

Nexperia

TRANS PNP 500V 250MA SOT223

0

2PB710ASL,235

2PB710ASL,235

Nexperia

TRANS PNP 50V 0.5A SOT-23

0

BCP53-10TF

BCP53-10TF

Nexperia

BCP53-10T/SOT223/SC-73

9505

2PD602ARL,235

2PD602ARL,235

Nexperia

TRANS NPN 50V 0.5A SOT-23

0

PHPT60603PYX

PHPT60603PYX

Nexperia

TRANS PNP 60V 3A LFPAK

3475

PBSS4041NT,215

PBSS4041NT,215

Nexperia

TRANS NPN 60V 3.8A SOT23

10

BST62,115

BST62,115

Nexperia

TRANS PNP DARL 80V 1A SOT89

9536

PHPT61003NYX

PHPT61003NYX

Nexperia

TRANS NPN 100V 3A LFPAK

12351

2PC4081Q,115

2PC4081Q,115

Nexperia

NOW NEXPERIA 2PC4081Q - SMALL SI

43450

PZT2907A,135

PZT2907A,135

Nexperia

TRANS PNP 60V 0.6A SOT223

1089

PBSS5240Y,115

PBSS5240Y,115

Nexperia

TRANS PNP 40V 2A 6TSSOP

5160

BCP51-16TF

BCP51-16TF

Nexperia

BCP51-16T/SOT223/SC-73

0

MMBTA92,215

MMBTA92,215

Nexperia

TRANS PNP 300V 100MA TO236AB

7445

PDTA114EU135

PDTA114EU135

Nexperia

PDTA114 - 0.1A, 50V, PNP

104000

BCP52TF

BCP52TF

Nexperia

BCP52T/SOT223/SC-73

0

BCW70,215

BCW70,215

Nexperia

TRANS PNP 45V 100MA TO236AB

2265

PBSS306PZ,135

PBSS306PZ,135

Nexperia

TRANS PNP 100V 4.1A SOT-223

2691

PBSS4330PASX

PBSS4330PASX

Nexperia

IC TRANS NPN 30V 3A SOT1061

0

PMST3906,135

PMST3906,135

Nexperia

NOW NEXPERIA PMST3906 - SMALL SI

150000

BC817K-40HR

BC817K-40HR

Nexperia

BC817KH SERIES - 45 V, 500 MA NP

33000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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