Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC856BMYL

BC856BMYL

Nexperia

TRANS PNP 60V 100MA DFN1006-3

8791

BCW71,215

BCW71,215

Nexperia

TRANS NPN 45V 100MA TO236AB

3000

PBHV8540T,215

PBHV8540T,215

Nexperia

TRANS NPN 400V 0.5A SOT23

2399

BCW29,215

BCW29,215

Nexperia

TRANS PNP 32V 0.1A SOT23

0

MMBT3904,215

MMBT3904,215

Nexperia

TRANS NPN 40V 200MA TO236AB

83504

2PC4081S,115

2PC4081S,115

Nexperia

TRANS NPN 50V 150MA SOT323

16508

2PA1576S,115

2PA1576S,115

Nexperia

TRANS PNP 50V 150MA SOT323

4840

BC807-25LVL

BC807-25LVL

Nexperia

BC807-25L/SOT23/TO-236AB

0

BC856BW,115

BC856BW,115

Nexperia

TRANS PNP 65V 100MA SOT323

75765

BCP53,115

BCP53,115

Nexperia

TRANS PNP 80V 1A SOT-223

11872

BSP19,115

BSP19,115

Nexperia

TRANS NPN 350V 0.1A SOT223

1131

BC807-16LWX

BC807-16LWX

Nexperia

TRANS PNP 45V 0.5A SOT323

0

BCW29,235

BCW29,235

Nexperia

TRANS PNP 32V 0.1A SOT23

0

BC817-25,215

BC817-25,215

Nexperia

TRANS NPN 45V 500MA TO236AB

61135

2PA1576Q,115

2PA1576Q,115

Nexperia

TRANS PNP 50V 150MA SOT323

0

PBSS5220V,115

PBSS5220V,115

Nexperia

TRANS PNP 20V 2A SOT666

5

PMBTA06,235

PMBTA06,235

Nexperia

TRANS NPN 80V 500MA TO236AB

3563

BF840,215

BF840,215

Nexperia

TRANS NPN 40V 25MA TO236AB

4602

MJD45H11AJ

MJD45H11AJ

Nexperia

MJD45H11A/SOT428/DPAK

4886

BCV46,215

BCV46,215

Nexperia

TRANS PNP DARL 60V 500MA TO236AB

12330

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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