Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PBSS4360ZX

PBSS4360ZX

Nexperia

TRANS NPN 60V 3A

407

PHPT61006NY,115

PHPT61006NY,115

Nexperia

POWER BIPOLAR TRANSISTOR

0

PBSS4420D,115

PBSS4420D,115

Nexperia

TRANS NPN 20V 4A 6TSOP

1844

BSP52,115

BSP52,115

Nexperia

TRANS NPN DARL 80V 1A SOT223

7971

PMSTA06,115

PMSTA06,115

Nexperia

TRANS NPN 80V 500MA SOT323

38358

BC847,235

BC847,235

Nexperia

TRANS NPN 45V 100MA TO236AB

0

BC847BQCZ

BC847BQCZ

Nexperia

BC847BQC/SOT8009/DFN1412D-3

0

2PA1774SM,315

2PA1774SM,315

Nexperia

TRANS PNP 40V 100MA DFN1006-3

0

BC816-25R

BC816-25R

Nexperia

BC816-25/SOT23/TO-236AB

3000

BCV49,115

BCV49,115

Nexperia

TRANS NPN DARL 60V 0.5A SOT89

420

BF824,235

BF824,235

Nexperia

TRANS PNP 30V 0.025A SOT23

7864

BC846S/ZL115

BC846S/ZL115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

108000

BCW60B,235

BCW60B,235

Nexperia

TRANS NPN 32V 0.1A SOT23

0

PBSS4220V,115

PBSS4220V,115

Nexperia

TRANS NPN 20V 2A SOT666

3243

PBSS5240XX

PBSS5240XX

Nexperia

TRANS PNP 40V 2A SOT89

0

BC847CW,135

BC847CW,135

Nexperia

TRANS NPN 45V 100MA SOT323

26

BCX70H,235

BCX70H,235

Nexperia

TRANS NPN 45V 0.1A SOT23

0

BSR33,135

BSR33,135

Nexperia

TRANS PNP 80V 1A SOT89

3306

PUMD15/ZL115

PUMD15/ZL115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC858W,115

BC858W,115

Nexperia

TRANS PNP 30V 100MA SOT323

16

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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