Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PMBT2369,235

PMBT2369,235

Nexperia

TRANS NPN 15V 0.2A SOT23

0

BC847A,215

BC847A,215

Nexperia

TRANS NPN 45V 100MA TO236AB

695

BC807-25W,115

BC807-25W,115

Nexperia

TRANS PNP 45V 500MA SOT323

8864

BCP69-25,115

BCP69-25,115

Nexperia

TRANS PNP 20V 2A SOT223

3370

PBSS5160V,115

PBSS5160V,115

Nexperia

TRANS PNP 60V 900MA SOT666

1880

BCP54TF

BCP54TF

Nexperia

BCP54T/SOT223/SC-73

0

BC847BW,135

BC847BW,135

Nexperia

TRANS NPN 45V 100MA SOT323

40938

BC847B,215

BC847B,215

Nexperia

TRANS NPN 45V 0.1A SOT23

64222

BCW68FR

BCW68FR

Nexperia

TRANS PNP 45V 800MA TO236AB

2257

BCP69-16,115

BCP69-16,115

Nexperia

TRANS PNP 20V 1A SOT223

4333

BCP52-16TF

BCP52-16TF

Nexperia

BCP52-16T/SOT223/SC-73

0

PBSS4612PA,115

PBSS4612PA,115

Nexperia

TRANS NPN 12V 6A 3HUSON

2376

BC817-40QCZ

BC817-40QCZ

Nexperia

BC817-40QC/SOT8009/DFN1412D-3

5000

BC846AW,135

BC846AW,135

Nexperia

TRANS NPN 65V 0.1A SOT323

0

2PD1820AS,115

2PD1820AS,115

Nexperia

TRANS NPN 50V 500MA SOT323

41917

BC817-16,215

BC817-16,215

Nexperia

TRANS NPN 45V 500MA TO236AB

28076

BC807-16LR

BC807-16LR

Nexperia

TRANS PNP 45V 500MA TO236AB

0

PBSS5350D,115

PBSS5350D,115

Nexperia

TRANS PNP 50V 3A 6TSOP

0

BC856W,115

BC856W,115

Nexperia

TRANS PNP 65V 100MA SOT323

620

PMBTA56,215

PMBTA56,215

Nexperia

TRANS PNP 80V 500MA TO236AB

52720

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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