Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PMBT2222,235

PMBT2222,235

Nexperia

TRANS NPN 30V 600MA TO236AB

0

BCP55-16,115

BCP55-16,115

Nexperia

TRANS NPN 60V 1A SOT-223

392

BC848B,215

BC848B,215

Nexperia

TRANS NPN 30V 100MA TO236AB

20851

BCP53-16,115

BCP53-16,115

Nexperia

TRANS PNP 80V 1A SOT223

249

BCW68HR

BCW68HR

Nexperia

TRANS PNP 45V 800MA TO236AB

0

BC869,115

BC869,115

Nexperia

TRANS PNP 20V 1A SOT89

14317

MJD32CAJ

MJD32CAJ

Nexperia

MJD32CA/SOT428/DPAK

4360

BFS20,215

BFS20,215

Nexperia

TRANS NPN 20V 25MA TO236AB

10165

PBSS4240V,115

PBSS4240V,115

Nexperia

TRANS NPN 40V 2A SOT666

9850

BC850BW,135

BC850BW,135

Nexperia

TRANS NPN 45V 100MA SOT323

0

MMBT3906,215

MMBT3906,215

Nexperia

TRANS PNP 40V 200MA TO236AB

3364

PBSS5630PA,115

PBSS5630PA,115

Nexperia

TRANS PNP 30V 6A 3HUSON

191

BC817K-25R

BC817K-25R

Nexperia

BIPOLAR GENERAL PURPOSE TRANSIST

63000

BC807-25HR

BC807-25HR

Nexperia

BC807-25H/SOT23/TO-236AB

25442

2PD601ARL,215

2PD601ARL,215

Nexperia

TRANS NPN 50V 100MA TO236AB

99132

PBHV8215Z,115

PBHV8215Z,115

Nexperia

TRANS NPN 150V 2A SOT223

2998

BF821,215

BF821,215

Nexperia

TRANS PNP 300V 50MA TO236AB

1263

BST50,115

BST50,115

Nexperia

TRANS NPN DARL 45V 1A SOT89

10849

BC846BW,135

BC846BW,135

Nexperia

TRANS NPN 65V 100MA SOT323

21055

BCX56-16,135

BCX56-16,135

Nexperia

TRANS NPN 80V 1A SOT89

7837

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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