Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PMST3904,115

PMST3904,115

Nexperia

TRANS NPN 40V 200MA SOT323

12655

PUMH9/ZL135

PUMH9/ZL135

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

160000

BC848W,135

BC848W,135

Nexperia

TRANS NPN 30V 0.1A SOT323

0

BC856W,135

BC856W,135

Nexperia

NOW NEXPERIA BC856W - SMALL SIGN

24335

PBSS8110D,115

PBSS8110D,115

Nexperia

TRANS NPN 100V 1A 6TSOP

20487

PMBT2222A,235

PMBT2222A,235

Nexperia

TRANS NPN 40V 600MA TO236AB

11972

BCX56-10TF

BCX56-10TF

Nexperia

BCX56-10T/SOT89/MPT3

3603

BFS19,215

BFS19,215

Nexperia

TRANS NPN 20V 30MA TO236AB

5783

PBSS4032PT,215

PBSS4032PT,215

Nexperia

TRANS PNP 30V 2.4A SOT23

2002

BC849CW,115

BC849CW,115

Nexperia

TRANS NPN 30V 100MA SOT323

3771

2PC4081R,115

2PC4081R,115

Nexperia

TRANS NPN 50V 150MA SOT323

5233

BC857AMB,315

BC857AMB,315

Nexperia

TRANSISTORS>100MHZ

40428170

BC856AW,135

BC856AW,135

Nexperia

TRANS PNP 65V 100MA SOT323

0

BFS19,235

BFS19,235

Nexperia

TRANS NPN 20V 30MA TO236AB

3327

BC807-16HR

BC807-16HR

Nexperia

BC807-16H/SOT23/TO-236AB

23864

PBSS5360PASX

PBSS5360PASX

Nexperia

TRANS PNP 60V 3A 3HUSON

0

BC807-16W,135

BC807-16W,135

Nexperia

TRANS PNP 45V 0.5A SOT323

0

BC817-25W,135

BC817-25W,135

Nexperia

TRANS NPN 45V 0.5A SOT323

6294

2PA1774QMB,315

2PA1774QMB,315

Nexperia

TRANS PNP 40V 0.1A 3DFN

0

BCX19,235

BCX19,235

Nexperia

NOW NEXPERIA BCX19 - SMALL SIGNA

30000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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