Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PHPT61003NY,115

PHPT61003NY,115

Nexperia

POWER BIPOLAR TRANSISTOR

0

BC816-16WX

BC816-16WX

Nexperia

BC816-16W/SOT323/SC-70

39000

PBSS8110X,135

PBSS8110X,135

Nexperia

TRANS NPN 100V 1A SOT89

34935

PBSS4240XF

PBSS4240XF

Nexperia

TRANS NPN 40V 2A SOT89

8358

PZTA44,115

PZTA44,115

Nexperia

TRANS NPN 400V 0.3A SOT223

182

BC857W,135

BC857W,135

Nexperia

NOW NEXPERIA BC857W - SMALL SIGN

1230000

PMBS3904,215

PMBS3904,215

Nexperia

TRANS NPN 40V 100MA TO236AB

97

BCX53-10TX

BCX53-10TX

Nexperia

BCX53-10T/SOT89/MPT3

990

BCP52-16,115

BCP52-16,115

Nexperia

TRANS PNP 60V 1A SOT-223

830

BC857CQAZ

BC857CQAZ

Nexperia

TRANS PNP 45V 0.1A SOT1215

1560

BC55PA,115

BC55PA,115

Nexperia

TRANS NPN 60V 1A DFN2020D-3

1

PBSS4140T,235

PBSS4140T,235

Nexperia

TRANS NPN 40V 1A TO236AB

5358

BCX55,115

BCX55,115

Nexperia

TRANS NPN 60V 1A SOT89

155

PBSS5240TVL

PBSS5240TVL

Nexperia

PBSS5240T/SOT23/TO-236AB

0

PBSS5140U,135

PBSS5140U,135

Nexperia

TRANS PNP 40V 1A SOT323

8183

BC847CQAZ

BC847CQAZ

Nexperia

TRANS NPN 45V 100MA DFN1010D-3

6

BCX56TF

BCX56TF

Nexperia

BCX56T/SOT89/MPT3

1998

PBSS4350X,115

PBSS4350X,115

Nexperia

TRANS NPN 50V 3A SOT89

1649

BC848W,115

BC848W,115

Nexperia

TRANS NPN 30V 100MA SOT323

3784

PBSS5540Z,115

PBSS5540Z,115

Nexperia

TRANS PNP 40V 5A SOT223

4906

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top