Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC817,235

BC817,235

Nexperia

TRANS NPN 45V 500MA TO236AB

12613

PMBT4403YSX

PMBT4403YSX

Nexperia

TRANS PNP 40V 600MA TO236AB

2558

BCW68FVL

BCW68FVL

Nexperia

BCW68FSOT23TO-236AB

9543

BC807K-25R

BC807K-25R

Nexperia

BC807K - 45V, 500MA PNP GENERAL-

268000

PBSS4021PZ,115

PBSS4021PZ,115

Nexperia

TRANS PNP 20V 6.6A SOT223

2438

BCP68F

BCP68F

Nexperia

BCP68/SC-73/REEL 13" Q1/T1 *ST

8059

PBSS9110Y,115

PBSS9110Y,115

Nexperia

TRANS PNP 100V 1A 6TSSOP

1941

BCP52-10TF

BCP52-10TF

Nexperia

BCP52-10T/SOT223/SC-73

0

PBSS4360PASX

PBSS4360PASX

Nexperia

TRANS NPN 60V 3A 3HUSON

0

PBSS5160QAZ

PBSS5160QAZ

Nexperia

TRANS PNP 60V 1A DFN1010D-3

4875

BC807-25LR

BC807-25LR

Nexperia

TRANS PNP 45V 500MA TO236AB

0

BC53-16PA,115

BC53-16PA,115

Nexperia

TRANS PNP 80V 1A 3HUSON

1198

PBSS4560PA,115

PBSS4560PA,115

Nexperia

TRANS NPN 60V 6A SOT1061

0

BCX71H,235

BCX71H,235

Nexperia

TRANS PNP 45V 100MA TO236AB

0

PBSS5240T,215

PBSS5240T,215

Nexperia

TRANS PNP 40V 2A TO236AB

3037

BCP51-10,135

BCP51-10,135

Nexperia

TRANS PNP 45V 1A SOT223

0

PMST5089,115

PMST5089,115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR,

0

BCV47,215

BCV47,215

Nexperia

TRANS NPN DARL 60V 500MA TO236AB

48158

BCP56F

BCP56F

Nexperia

BCP56/SC-73/REEL 13" Q1/T1 *ST

1906

BCX51-10F

BCX51-10F

Nexperia

TRANS PNP 45V 1A SOT89

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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