Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PBSS4540X,135

PBSS4540X,135

Nexperia

NOW NEXPERIA PBSS4540X - SMALL S

10720

BSS63,215

BSS63,215

Nexperia

TRANS PNP 100V 100MA TO236AB

8090

BC850B,215

BC850B,215

Nexperia

TRANS NPN 45V 100MA TO236AB

286

BCX71K,235

BCX71K,235

Nexperia

TRANS PNP 45V 100MA TO236AB

9631

2PB1219AS,115

2PB1219AS,115

Nexperia

TRANS PNP 50V 500MA SOT323

4804

BF822,215

BF822,215

Nexperia

TRANS NPN 250V 0.05A SOT23

2113

PMBT2907AMYL

PMBT2907AMYL

Nexperia

PMBT2907AM/SOT883/XQFN3

29628

PBSS4480XZ

PBSS4480XZ

Nexperia

TRANS NPN 80V 4A SOT89-3

1045

2PC4617QM,315

2PC4617QM,315

Nexperia

TRANS NPN 50V 0.1A SC101

0

BCW32,215

BCW32,215

Nexperia

TRANS NPN 32V 100MA TO236AB

1702

PHPT60606PY,115

PHPT60606PY,115

Nexperia

POWER BIPOLAR TRANSISTOR, 6A, 60

4500

BC859BW,135

BC859BW,135

Nexperia

TRANS PNP 30V 0.1A SOT323

0

BC849BW,135

BC849BW,135

Nexperia

TRANS NPN 30V 0.1A SOT323

0

BCP55TF

BCP55TF

Nexperia

BCP55T/SOT223/SC-73

0

BC807-16,235

BC807-16,235

Nexperia

TRANS PNP 45V 0.5A SOT23

0

PBSS4580PA,115

PBSS4580PA,115

Nexperia

TRANS NPN 80V 5.6A 3HUSON

0

BC807-25LWF

BC807-25LWF

Nexperia

TRANS PNP 45V 0.5A SOT323

0

BCX53-16,115

BCX53-16,115

Nexperia

TRANS PNP 80V 1A SOT89

273755

NXP3875YVL

NXP3875YVL

Nexperia

NXP3875Y/SOT23/TO-236AB

0

BFS20W,115

BFS20W,115

Nexperia

TRANS NPN 20V 0.025A SOT323

6356

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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