Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2PD601ART,235

2PD601ART,235

Nexperia

TRANS NPN 50V 100MA TO236AB

0

BCP69-25,135

BCP69-25,135

Nexperia

TRANS PNP 20V 1A SOT223

0

BC860C,235

BC860C,235

Nexperia

TRANS PNP 45V 0.1A SOT23

0

PUMD9/ZL135

PUMD9/ZL135

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

290000

MJD31CAJ

MJD31CAJ

Nexperia

MJD31CA/SOT428/DPAK

3644

PMST4403,115

PMST4403,115

Nexperia

TRANS PNP 40V 600MA SOT323

2289

BC857B,215

BC857B,215

Nexperia

TRANS PNP 45V 100MA TO236AB

75520

BC806-25HVL

BC806-25HVL

Nexperia

BC806-25H/SOT23/TO-236AB

9570

PMST2222,115

PMST2222,115

Nexperia

TRANS NPN 30V 600MA SOT323

0

2PD602ASL,215

2PD602ASL,215

Nexperia

TRANS NPN 50V 0.5A SOT-23

3252

BCW68GR

BCW68GR

Nexperia

BCW68GSOT23TO-236AB

0

BC807-40LZ

BC807-40LZ

Nexperia

BC807-40L/SOT23/TO-236AB

0

PXTA42,115

PXTA42,115

Nexperia

TRANS NPN 300V 0.1A SOT89

0

PBSS5350D,125

PBSS5350D,125

Nexperia

TRANS PNP 50V 3A 6TSOP

4188

BC817K-16HR

BC817K-16HR

Nexperia

TRANS NPN 45V 500MA TO236AB

1570

PMBT4403,235

PMBT4403,235

Nexperia

TRANS PNP 40V 600MA TO236AB

8808

BSR33,115

BSR33,115

Nexperia

TRANS PNP 80V 1A SOT89

581

PBSS303NZ,135

PBSS303NZ,135

Nexperia

TRANS NPN 30V 5.5A SOT-223

1291

BC69PA,115

BC69PA,115

Nexperia

NOW NEXPERIA BC69PA - SMALL SIGN

2050

BC860CW,115

BC860CW,115

Nexperia

TRANS PNP 45V 100MA SOT323

9517

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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