Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC807-25LZ

BC807-25LZ

Nexperia

BC807-25L/SOT23/TO-236AB

0

PMBT2907A/DLT215

PMBT2907A/DLT215

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

42000

BC857B,235

BC857B,235

Nexperia

TRANS PNP 45V 100MA TO236AB

4224

PBSS5230T,215

PBSS5230T,215

Nexperia

TRANS PNP 30V 2A SOT23

1310

BSP61,115

BSP61,115

Nexperia

TRANS PNP DARL 60V 1A SOT223

1277

BCP51,115

BCP51,115

Nexperia

TRANS PNP 45V 1A SOT-223

1800

2PD2150,115

2PD2150,115

Nexperia

TRANS NPN 20V 3A SOT89

1009

PBSS4032NX,115

PBSS4032NX,115

Nexperia

TRANS NPN 30V 4.7A SOT89

441

PBSS303NX,115

PBSS303NX,115

Nexperia

TRANS NPN 30V 5.1A SOT89

1631

BCW32,235

BCW32,235

Nexperia

TRANS NPN 32V 0.1A SOT23

0

BCP54-10,135

BCP54-10,135

Nexperia

TRANS NPN 45V 1A SOT223

4533

PZTA92,115

PZTA92,115

Nexperia

TRANS PNP 300V 0.1A SOT223

3662

PHPT61006NYX

PHPT61006NYX

Nexperia

TRANS NPN 100V 6A LFPAK56 PWRSO8

1440

BC847CQCZ

BC847CQCZ

Nexperia

BC847CQC/SOT8009/DFN1412D-3

5000

BCP55-16TF

BCP55-16TF

Nexperia

BCP55-16T/SOT223/SC-73

0

BC846B,215

BC846B,215

Nexperia

TRANS NPN 65V 0.1A SOT23

319206

PMBT2222AYSX

PMBT2222AYSX

Nexperia

TRANS NPN 40V 0.6A SC-88

145

PBSS5250T,215

PBSS5250T,215

Nexperia

TRANS PNP 50V 2A TO236AB

0

BF620,115

BF620,115

Nexperia

TRANS NPN 300V 50MA SOT89

1

PMBTA14,215

PMBTA14,215

Nexperia

TRANS NPN DARL 30V 500MA TO236AB

8

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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