Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC857AW,115

BC857AW,115

Nexperia

TRANS PNP 45V 100MA SOT323

47475

BC817-25QAZ

BC817-25QAZ

Nexperia

TRANS NPN 45V 0.5A DFN1010D-3

0

PBSS4021NZ,115

PBSS4021NZ,115

Nexperia

TRANS NPN 20V 8A SOT223

5708

PBSS4140U,135

PBSS4140U,135

Nexperia

TRANS NPN 40V 1A SOT323

7108

PMBT4403,215

PMBT4403,215

Nexperia

TRANS PNP 40V 600MA TO236AB

24788

BC807-40HZ

BC807-40HZ

Nexperia

BC807-40H/SOT23/TO-236AB

29940

PBSS5350X,146

PBSS5350X,146

Nexperia

TRANS PNP 50V 3A SOT89

399

PMBT2907AQAZ

PMBT2907AQAZ

Nexperia

PMBT2907AQA/SOT1215/DFN1010D-3

4480

PBSS4630PA,115

PBSS4630PA,115

Nexperia

PBSS4630PA - 30V, 6A NPN LOW VCE

48000

PBSS5240V,115

PBSS5240V,115

Nexperia

TRANS PNP 40V 1.8A SOT666

2757

PBSS303PX,115

PBSS303PX,115

Nexperia

TRANS PNP 30V 5.1A SOT89

38

BC846B,235

BC846B,235

Nexperia

TRANS NPN 65V 0.1A SOT23

52258

BST51,115

BST51,115

Nexperia

TRANS NPN DARL 60V 1A SOT89

766

PDTC144ET

PDTC144ET

Nexperia

NOW NEXPERIA PDTC144ET - SMALL S

0

BC817-40,215

BC817-40,215

Nexperia

TRANS NPN 45V 0.5A SOT23

88642

PBHV8115TLHR

PBHV8115TLHR

Nexperia

PBHV8115TLH/SOT23/TO-236AB

0

PBSS304PX,115

PBSS304PX,115

Nexperia

TRANS PNP 60V 4.2A SOT89

1583

BCP56-10TX

BCP56-10TX

Nexperia

TRANS NPN 80V 1A SOT223

3117

PBSS8110Y,115

PBSS8110Y,115

Nexperia

TRANS NPN 100V 1A 6TSSOP

362

2PB1424,115

2PB1424,115

Nexperia

TRANS PNP 20V 3A SOT89

1000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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